Amorphous semiconductor photoreceptors for electrophotography
电子照相用非晶半导体感光体
基本信息
- 批准号:4046-1993
- 负责人:
- 金额:$ 2.04万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:1994
- 资助国家:加拿大
- 起止时间:1994-01-01 至 1995-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
No summary - Aucun sommaire
无摘要- Aucun sommaire
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Kasap, Safa其他文献
Thermal Properties and Thermal Analysis: Fundamentals, Experimental Techniques and Applications
- DOI:
10.1007/978-3-319-48933-9_19 - 发表时间:
2017-01-01 - 期刊:
- 影响因子:0
- 作者:
Kasap, Safa;Malek, Jiri;Svoboda, Roman - 通讯作者:
Svoboda, Roman
Electrical Conduction in Metals and Semiconductors
- DOI:
10.1007/978-3-319-48933-9_2 - 发表时间:
2017-01-01 - 期刊:
- 影响因子:0
- 作者:
Kasap, Safa;Koughia, Cyril;Ruda, Harry E. - 通讯作者:
Ruda, Harry E.
Charge collection efficiency in photoconductive detectors under small to large signals
- DOI:
10.1063/1.5096900 - 发表时间:
2019-06-28 - 期刊:
- 影响因子:3.2
- 作者:
Ramaswami, Kieran;Johanson, Robert;Kasap, Safa - 通讯作者:
Kasap, Safa
Photoconductors for X-Ray Image Detectors
- DOI:
10.1007/978-3-319-48933-9_45 - 发表时间:
2017-01-01 - 期刊:
- 影响因子:0
- 作者:
Kabir, M. Zahangir;Kasap, Safa - 通讯作者:
Kasap, Safa
Amorphous selenium and its alloys from early xeroradiography to high resolution X-ray image detectors and ultrasensitive imaging tubes
- DOI:
10.1002/pssb.200982007 - 发表时间:
2009-08-01 - 期刊:
- 影响因子:1.6
- 作者:
Kasap, Safa;Frey, Joel B.;Rowlands, John A. - 通讯作者:
Rowlands, John A.
Kasap, Safa的其他文献
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{{ truncateString('Kasap, Safa', 18)}}的其他基金
Amorphous and Nanocrystalline Semiconductors for Optoelectronic Applications: Photoconductors, Detectors and Sensors Based on a-Se Alloys and Optoelectronic Glasses
用于光电应用的非晶和纳米晶半导体:基于a-Se合金和光电玻璃的光电导体、探测器和传感器
- 批准号:
RGPIN-2016-04982 - 财政年份:2021
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Amorphous and Nanocrystalline Semiconductors for Optoelectronic Applications: Photoconductors, Detectors and Sensors Based on a-Se Alloys and Optoelectronic Glasses
用于光电应用的非晶和纳米晶半导体:基于a-Se合金和光电玻璃的光电导体、探测器和传感器
- 批准号:
RGPIN-2016-04982 - 财政年份:2020
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Amorphous and Nanocrystalline Semiconductors for Optoelectronic Applications: Photoconductors, Detectors and Sensors Based on a-Se Alloys and Optoelectronic Glasses
用于光电应用的非晶和纳米晶半导体:基于a-Se合金和光电玻璃的光电导体、探测器和传感器
- 批准号:
RGPIN-2016-04982 - 财政年份:2019
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Optical switching based on transition metal oxide thin films
基于过渡金属氧化物薄膜的光开关
- 批准号:
509164-2017 - 财政年份:2019
- 资助金额:
$ 2.04万 - 项目类别:
Collaborative Research and Development Grants
Amorphous and Nanocrystalline Semiconductors for Optoelectronic Applications: Photoconductors, Detectors and Sensors Based on a-Se Alloys and Optoelectronic Glasses
用于光电应用的非晶和纳米晶半导体:基于a-Se合金和光电玻璃的光电导体、探测器和传感器
- 批准号:
RGPIN-2016-04982 - 财政年份:2018
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Optical switching based on transition metal oxide thin films
基于过渡金属氧化物薄膜的光开关
- 批准号:
509164-2017 - 财政年份:2018
- 资助金额:
$ 2.04万 - 项目类别:
Collaborative Research and Development Grants
Use of nanotechnology for waste water treatment in remote communities by radioluminescence generated UV light from dispersed composite nanoparticles
利用纳米技术通过分散的复合纳米粒子发出的辐射发光产生紫外线来处理偏远社区的废水
- 批准号:
512126-2017 - 财政年份:2017
- 资助金额:
$ 2.04万 - 项目类别:
Engage Grants Program
Optical switching based on transition metal oxide thin films
基于过渡金属氧化物薄膜的光开关
- 批准号:
509164-2017 - 财政年份:2017
- 资助金额:
$ 2.04万 - 项目类别:
Collaborative Research and Development Grants
Amorphous and Nanocrystalline Semiconductors for Optoelectronic Applications: Photoconductors, Detectors and Sensors Based on a-Se Alloys and Optoelectronic Glasses
用于光电应用的非晶和纳米晶半导体:基于a-Se合金和光电玻璃的光电导体、探测器和传感器
- 批准号:
RGPIN-2016-04982 - 财政年份:2017
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Electronic and Optoelectronic Materials and Devices
电子光电材料与器件
- 批准号:
1000212022-2008 - 财政年份:2016
- 资助金额:
$ 2.04万 - 项目类别:
Canada Research Chairs
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协作研究:利用人工智能、游戏模块和实践经验为高中生提供半导体课程和学习框架
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职业:用于芯片级射频和光信号处理的氮化物 PhoXonic 集成电路 (SONIC) 平台上的半导体
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