Equipment for developing advanced nanophotonic devices for applications in green fibre network. photovoltaics, solid state lighting, and quantum computing

用于开发用于绿色光纤网络的先进纳米光子器件的设备。

• 批准号: 407021-2011
• 负责人: Mi, Zetian
• 金额: $ 9.46万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Research Tools and Instruments - Category 1 (<$150,000)
• 财政年份: 2010
• 资助国家: 加拿大
• 起止时间: 2010-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=472607
• 关键词: Equipment; developing; advanced; nanophotonic; devices

Recently, a new generation of nanoscale materials, with the use of group III-nitride and III-antimonide nanoscale heterostructures, has been intensively investigated. III-nitrides are the only semiconductors whose energy bandgap, ranging from UV (~ 6.2 eV) to near-infrared (~ 0.7 eV), can match nearly perfectly to the solar spectrum, while III-antimonides are the only semiconductors with the interband transition in the mid-infrared wavelength range. Consequently, III-nitrides and III-antimonide based nanoscale semiconductors have emerged as the materials of choice for a host of advanced nanophotonic devices, including lasers, LEDs, solar cells, single photon source, and phototransistors, with critical applications in solid state lighting, solar energy harvesting, infrared optoelectronics, and future quantum computing. In this context, a group of researchers at McGill Univ., Univ. de Sherbrooke, Memorial Univ. of Newfoundland, and Univ. of Western Ontario have initiated a range of research projects centered on nitride- and antimonide-based nanophotonic devices. These research efforts, including more than 20 funded research projects and well over 10 new initiatives, have been made possible, in part, by the unique GaN molecular beam epitaxial (MBE) growth facility recently established by Prof. Z. Mi at McGill Univ. While tremendous progress has been made in our joint research projects, it has also been recognized that, in order to realize the full potential of the highly promising nitride nanomaterials, it is essential to install an antimony effusion cell in the existing MBE system, which can serve as a surfactant and, therefore, can significantly improve the materials quality and enhance the performance of the resulting devices and systems. More importantly, the use of an antimony source in a nitride MBE system, the first of its kind in the world, will provide a new dimension for developing the technologically important near- and mid-infrared nanophotonic devices that are relevant to future computing systems and to environmental, bio, and gas sensors. Consequently, the proposed equipment will significantly advance the research progress and training of more than 40 students and postdocs in over 14 research groups at 4 universities across Canada.

最近，人们对使用III族氮化物和III族锑化物纳米级异质结构的新一代纳米材料进行了深入研究。 III族氮化物是唯一能带隙范围从紫外（~ 6.2 eV）到近红外（~ 0.7 eV）几乎完美匹配太阳光谱的半导体，而III族锑化物是唯一在中红外波长范围内具有带间跃迁的半导体。因此，基于III族氮化物和III族锑化物的纳米半导体已成为许多先进纳米光子器件的首选材料，包括激光器、LED、太阳能电池、单光子源和光电晶体管，在固态照明、太阳能收集、红外光电子和未来量子计算方面具有关键应用。在此背景下，麦吉尔大学的一组研究人员。德舍布鲁克，纪念大学。纽芬兰大学和大学。西安大略省启动了一系列以氮化物和锑化物为基础的纳米光子器件的研究项目。这些研究工作，包括 20 多个资助的研究项目和 10 多个新举措，部分得益于 Z. Mi 教授最近在麦吉尔大学建立的独特的 GaN 分子束外延 (MBE) 生长设施。虽然我们的联合研究项目取得了巨大进展，但人们也认识到，为了充分发挥这种极具前景的氮化物纳米材料的潜力，有必要在现有MBE系统中安装锑流出池，它可以充当表面活性剂，因此可以显着提高材料质量并增强所得设备和系统的性能。更重要的是，在氮化物 MBE 系统中使用锑源，这是世界上首个此类系统，将为开发技术上重要的近红外和中红外纳米光子器件提供新的维度，这些器件与未来的计算系统以及环境、生物和气体传感器相关。因此，拟议的设备将显着推进加拿大 4 所大学超过 14 个研究小组的 40 多名学生和博士后的研究进展和培训。