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Nano-scaled interface and material control for III-N electronics

Nano-scaled interface and material control for III-N electronics
III-N 电子器件的纳米级接口和材料控制
批准号:
372068-2010
负责人:
Barlage, Douglas
金额:
$1.68万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2011
资助国家:
加拿大
项目状态:
已结题
起止时间:
2011-01-01 至 2012-12-31

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中文摘要
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英文摘要
The work proposed in this discovery grant is to be performed at the University of Alberta, Electrical and Computer Engineering. The proposed discovery research is an effort to extend semiconductor device capabilities through the continued development of Gallium Nitride (GN) and related column III-N materials as
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Multi-layer I/O chip architecture enabled by back end of line compatible switch for increased data handling density
  • 批准号:
    561133-2020
  • 项目类别:
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  • 资助金额:
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  • 财政年份:
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Multi-layer I/O chip architecture enabled by back end of line compatible switch for increased data handling density
  • 批准号:
    561133-2020
  • 项目类别:
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  • 资助金额:
    $3.64万
  • 财政年份:
    2020
  • 负责人:
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  • 批准号:
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
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  • 负责人:
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  • 依托单位:
Wide Band Gap Semiconductors for Flexible Power Applications
  • 批准号:
    RGPIN-2015-04709
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
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  • 财政年份:
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  • 负责人:
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