Multi-layer I/O chip architecture enabled by back end of line compatible switch for increased data handling density

多层 I/O 芯片架构由后端兼容交换机实现，可提高数据处理密度

• 批准号: 561133-2020
• 负责人: Barlage, Douglas
• 金额: $ 3.64万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Alliance Grants
• 财政年份: 2021
• 资助国家: 加拿大
• 起止时间: 2021-01-01 至 2022-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=723435
• 关键词: Multi; layer; chip; architecture; enabled

Alberta and Canada have a strong and time-sensitive opportunity to be leaders in the effort to vastly improve data handling densities at the electronic level and significantly impact the global Internet of Things (IoT) industry. The goal of this project is to unlock new capabilities of IoT electronics by massively increasing data handling capabilities in key parts of the IoTinfrastructure at the electronic level. This will be achieved by incorporating a novel Alberta developed metal oxide thin-film transistor (MOTFT) switch device that allows for multiple layers of data input/output (IO) channels to be stacked in a 3D monolithically integrated multi-tiered IO chip architecture (3DMIO). The result is a compact 3DMIO chip with, in this iteration, double the data IO density within the same surface area of a single chip. This density enhancement is seen as a key enabler in the $450 Billion dollar semiconductor industry in beyond Moore's law devices. The switch effectively works as a glue between disparate technologies that are part of the IoT infrastructure such as traditional advanced logic, sensor networks, memory,communications, neuromorphic and potentially quantum computing. The functional advantage of the MOTFT switch enabling a 3D monolithic architecture for IoT is the realization of heterogeneous technologies operating with different link power bus and datacommunication link requirements all within a single chip. The functional advantage of the MOTFT switch will be demonstrated through its integration within the final 3DMIO chip prototype that will be built by the end of the project.

阿尔伯塔省和加拿大有一个强大的和时间敏感的机会成为领导者，努力大大提高电子层面的数据处理密度，并显着影响全球物联网（IoT）行业。该项目的目标是通过在电子层面上大规模提高物联网基础设施关键部分的数据处理能力，释放物联网电子产品的新功能。这将通过结合一种新型的阿尔伯塔开发的金属氧化物薄膜晶体管（MOTFT）开关器件来实现，该器件允许多层数据输入/输出（IO）通道堆叠在3D单片集成多层IO芯片架构（3DMIO）中。其结果是一个紧凑的3DMIO芯片，在此迭代中，在单个芯片的相同表面积内，数据IO密度翻了一番。这种密度提高被视为在超过摩尔定律器件的4500亿美元半导体工业中的关键推动者。该交换机有效地充当了物联网基础设施中不同技术之间的粘合剂，例如传统的高级逻辑，传感器网络，存储器，通信，神经形态和潜在的量子计算。MOTFT开关实现物联网3D单片架构的功能优势是在单个芯片内实现异构技术，这些技术在不同的链路电源总线和互连链路要求下运行。MOTFT开关的功能优势将通过其在最终3DMIO芯片原型中的集成来展示，该芯片原型将在项目结束时构建。