Multi-layer I/O chip architecture enabled by back end of line compatible switch for increased data handling density

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Alberta and Canada have a strong and time-sensitive opportunity to be leaders in the effort to vastly improve data handling densities at the electronic level and significantly impact the global Internet of Things (IoT) industry. The goal of this project is to unlock new capabilities of IoT electronics by massively increasing data handling capabilities in key parts of the IoTinfrastructure at the electronic level. This will be achieved by incorporating a novel Alberta developed metal oxide thin-film transistor (MOTFT) switch device that allows for multiple layers of data input/output (IO) channels to be stacked in a 3D monolithically integrated multi-tiered IO chip architecture (3DMIO). The result is a compact 3DMIO chip with, in this iteration, double the data IO density within the same surface area of a single chip. This density enhancement is seen as a key enabler in the $450 Billion dollar semiconductor industry in beyond Moore's law devices. The switch effectively works as a glue between disparate technologies that are part of the IoT infrastructure such as traditional advanced logic, sensor networks, memory,communications, neuromorphic and potentially quantum computing. The functional advantage of the MOTFT switch enabling a 3D monolithic architecture for IoT is the realization of heterogeneous technologies operating with different link power bus and datacommunication link requirements all within a single chip. The functional advantage of the MOTFT switch will be demonstrated through its integration within the final 3DMIO chip prototype that will be built by the end of the project.