Wide Band Gap Semiconductors for Flexible Power Applications

适用于灵活电源应用的宽带隙半导体

• 批准号: RGPIN-2015-04709
• 负责人: Barlage, Douglas
• 金额: $ 1.82万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=637069
• 关键词: Wide; Band; Gap; Semiconductors; Flexible

This discovery grant proposal describes a comprehensive research and education program of wide-band gap semiconductors for power applications in diversified mediums. Two semiconductors of focus are gallium nitride (GaN) and zinc oxide (ZnO), both which offer very distinct advantages over silicon (Si) over their respective application space. The development and commercialization of these material systems are the underlying motivation for this work. The GaN device offers performance advantages on traditional single crystal substrates that currently cannot be realized with Si or silicon carbide (SiC). The envisioned goal is seeing the discrete MOSFET component to its completion for eventual implementation in large-scale power systems. The immediate advantages of GaN is the potential higher speed operation. Power management systems operating at higher frequency allow the use of smaller passive components with higher efficiency thus leading to a positive environmental impact.

这项发现补助金提案描述了宽带隙半导体在各种介质中的功率应用的综合研究和教育计划。两种重点关注的半导体是氮化镓（GaN）和氧化锌（ZnO），这两种半导体在各自的应用领域都比硅（Si）具有非常明显的优势。这些材料系统的开发和商业化是这项工作的根本动机。GaN器件在传统单晶衬底上提供了目前无法用Si或碳化硅（SiC）实现的性能优势。预期目标是完成分立MOSFET元件，以便最终在大规模电力系统中实现。GaN的直接优势是潜在的更高速度操作。在较高频率下工作的电源管理系统允许使用具有较高效率的较小无源元件，从而产生积极的环境影响。