Indium free zinc oxide thin film transistors for emerging applications

薄膜晶体管(TFT)正迅速成为技术版图中无处不在的一部分。它们是液晶显示器(LCD)的组成部分。除了硅技术，正在生产的铟镓锌氧化物(IGZO)正在形成下一代显示技术的支柱。对于商业电子应用来说，铟的供应相对短缺。如果制造温度能够保持在非破坏性的水平(&lt；200℃)，薄膜晶体管就有希望在其他各种应用中发挥作用。这些晶体管可以用于分布式开关和本地传感器放大问题，这些问题在本质上可以被认为是可打印的。这项拟议的工作旨在扩展一种示范的方法，该方法利用一种几乎可以在任何衬底上实施的无铟低温技术。

Thin Film Transistors (TFT) are rapidly becoming a ubiquitous part of the technology landscape. They are integral to the Liquid Crystal Display (LCD). Beyond silicon technologies, Indium Gallium Zinc Oxide (IGZO), are in production are forming the backbone of next generation display technologies. Indium is in relatively short supply for commercial electronics applications. Thin film transistors hold promise for a variety of other applications if manufacturing temperatures can be held to nondestructive levels (<200C). These transistors can be used for distributed switching and local sensor amplification problems that could be considered prinatable in nature. The proposed work seeks to expand on a demonstrated approach that utilizes an indium free low temperature technology that can be implemented on virtually any substrate.