Group III nitride heterostructured nanowires for light emitting diodes

氮化镓(GaN)和氮化铟(InGaN)发光二极管(LED)目前是一个价值数十亿美元的行业，应用于手机背光、交通信号、信息显示板和投影电视。固态照明的发展取代了白炽灯和荧光灯用于普通照明，这代表着一个更大的全球市场，同时由于LED的低能耗，伴随着巨大的节能和相应的温室气体排放减少。传统的LED技术目前受到与材料沉积工艺相关的成本、成品率和性能问题的限制。新兴的半导体纳米线领域允许以低廉的成本沉积高光学质量的任意材料和合金。这将为LED带来新的波长和更高的能效。纳米线异质结构将通过金属有机化学气相沉积生长，并通过显微镜和电学表征技术进行表征，并被整合到器件中。该项目将研究这些纳米线异质结构的材料科学，并研究提高纳米线LED的效率、亮度和光谱发射范围的策略。

Gallium nitride (GaN) and Indium Gallium Nitride (InGaN) light emitting diodes (LEDs) are currently a multibillion dollar industry with applications in cell phone back lighting, traffic signals, message display boards, and projection television. The development of solid state lighting to displace incandescent and fluorescent lamps for general illumination represents an even larger worldwide market, accompanied by a huge energy savings and corresponding greenhouse emissions reduction due to the lower energy consumption of LEDs. Conventional LED technology is presently limited by cost, yield, and performance issues that are related to the materials deposition process. The emerging field of semiconductors nanowires allows arbitrary materials and alloys of high optical quality to be deposited inexpensively. This will bring new wavelengths and higher energy efficiencies to LEDs. Nanowire heterostructures will be grown by metal organic chemical vapor deposition, characterized through microscopy and electrical characterization techniques, and be incorporated into devices. This project will study the materials science of these nanowire heterostructures, and investigate strategies to increase the efficiency, brightness, and spectral emission range of nanowire LEDs.