Group III nitride heterostructured nanowires for light emitting diodes

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Gallium nitride (GaN) and Indium Gallium Nitride (InGaN) light emitting diodes (LEDs) are currently a multibillion dollar industry with applications in cell phone back lighting, traffic signals, message display boards, and projection television. The development of solid state lighting to displace incandescent and fluorescent lamps for general illumination represents an even larger worldwide market, accompanied by a huge energy savings and corresponding greenhouse emissions reduction due to the lower energy consumption of LEDs. Conventional LED technology is presently limited by cost, yield, and performance issues that are related to the materials deposition process. The emerging field of semiconductors nanowires allows arbitrary materials and alloys of high optical quality to be deposited inexpensively. This will bring new wavelengths and higher energy efficiencies to LEDs. Nanowire heterostructures will be grown by metal organic chemical vapor deposition, characterized through microscopy and electrical characterization techniques, and be incorporated into devices. This project will study the materials science of these nanowire heterostructures, and investigate strategies to increase the efficiency, brightness, and spectral emission range of nanowire LEDs.