Memory circuits for spin electronics

自旋电子学的存储电路

• 批准号: 228060-2009
• 负责人: Sheikholeslami, Ali
• 金额: $ 3.35万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=524171
• 关键词: Memory; circuits; spin; electronics

Spin Electronics (or spintronics) is a new and emerging field of science and engineering that exploits the spin of electrons, in addition to their charge, for the purpose of information storage, transport, and manipulation. The ultimate aim of research in spintronics is the discovery and invention of new devices, such as spin transistors, and their integration into semiconductor technology so as to create better functionality and performance at lower cost and complexity. The purpose of this research is to explore circuit techniques for spin-based devices that are suitable for nonvolatile memory applications, replacing conventional memory technologies such as DRAM, SRAM, Flash, and EEPROM.

自旋电子学（Spin Electronics）是一个新兴的科学和工程领域，它利用电子的自旋，除了它们的电荷，用于信息存储，传输和操纵。自旋电子学研究的最终目标是发现和发明新器件，如自旋晶体管，并将其集成到半导体技术中，以便以较低的成本和复杂性创造更好的功能和性能。本研究的目的是探索适用于非易失性存储器应用的自旋器件的电路技术，以取代传统的存储器技术，如DRAM，SRAM，Flash和EEPROM。