"Physics-Based Stochastic Noise Characterization and Modeling of Nanoscale Field-Effect-Transistors (FETs) for Designs of Low-Noise, Low-Power Integrated Circuits (IC)"

“用于低噪声、低功耗集成电路 (IC) 设计的纳米级场效应晶体管 (FET) 的基于物理的随机噪声表征和建模”

• 批准号: 261741-2012
• 负责人: Chen, ChihHung
• 金额: $ 1.31万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=547872
• 关键词: Physics; Based; Stochastic; Noise; Characterization

The research proposal presented in this application is to develop a first-rate research and training program for the investigation of high-frequency (HF) noise in semiconductor transistors, especially for nanoscale silicon-based Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), from device characterization to low-noise, low-power integrated circuit (IC) designs. This program consists of four major research areas - namely design and characterization of nanoscale MOSFETs using technology computer-aided-design (TCAD) simulators, high-frequency noise measurement techniques, simulation-oriented noise modeling, and low-noise, low-power IC designs. The emphasis of this research program is primarily on the development of (1) the infrastructure to study the characteristics of nanoscale MOSFETs using TCAD simulators; (2) fast noise measurement techniques and a novel four-port HF noise measurement system, (3) accurate and physics-based corner models to take care of the impacts from process variations, channel engineering, device architectures, and gate leakage current; and (4) novel HF circuits for low-voltage, low-noise wireless applications. All efforts will be taken to fully exploit the research results commercially, generate economic benefits and therefore fuel the Canadian economy. Potential users of these research results include manufacturers associated with the semiconductor manufacturing, microelectronics, and telecommunication industries. In addition, the state-of-the-art infrastructure developed in this research program will be used extensively in collaboration with industrial partners, with the objective of empowering them with the competitive edge that is vital to excelling in the present economic scenario. Finally, the proposed research program will create an essential research and training environment that is appropriate to impart requisite skills to highly qualified personnel (HQP) that are in line with the needs of academia or Canadian microelectronics and telecommunication industries in the area of high-frequency device characterization and circuit-level testing. The program and innovative infrastructure will attract talented and experienced researchers and HQP in the world and retain them in Canada.

本申请中提出的研究计划是为半导体晶体管，特别是纳米硅基金属氧化物半导体场效应晶体管（mosfet）的高频（HF）噪声的研究制定一流的研究和培训计划，从器件表征到低噪声，低功耗集成电路（IC）设计。该计划包括四个主要研究领域-即利用计算机辅助设计（TCAD）模拟器技术设计和表征纳米级mosfet，高频噪声测量技术，面向仿真的噪声建模以及低噪声，低功耗IC设计。本研究计划的重点主要是开发(1)使用TCAD模拟器研究纳米级mosfet特性的基础设施；(2)快速噪声测量技术和新型四端口高频噪声测量系统；(3)精确的基于物理的拐角模型，以考虑工艺变化、通道工程、器件架构和栅极泄漏电流的影响；(4)用于低电压、低噪声无线应用的新型高频电路。将尽一切努力将研究成果充分商业化，产生经济效益，从而为加拿大经济提供动力。这些研究成果的潜在用户包括与半导体制造、微电子和电信行业相关的制造商。此外，在这个研究项目中开发的最先进的基础设施将广泛用于与工业合作伙伴的合作，目的是赋予他们竞争优势，这对在当前的经济情况下取得优异成绩至关重要。最后，拟议的研究计划将创造一个必要的研究和培训环境，以适当地传授必要的技能给高素质的人才（HQP），这些人才符合学术界或加拿大微电子和电信行业在高频器件特性和电路级测试领域的需求。该项目和创新的基础设施将吸引世界各地有才华和经验丰富的研究人员和HQP，并将他们留在加拿大。