SiGe and stress technology for next generations of high performance electronic and photonic devices

用于下一代高性能电子和光子器件的 SiGe 和应力技术

• 批准号: 372060-2009
• 负责人: Xia, Guangrui
• 金额: $ 1.46万
• 依托单位: University of British Columbia
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2015
• 资助国家: 加拿大
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=572854
• 关键词: SiGe; stress; technology; next; generations

For decades, the silicon (Si) based semiconductor industry has been crucial to drawing the broad outlines of the modern history of economics and technology. In the past decade, however, the ever increasing demands on performance enhancement have pushed Si to its physical limits. The introduction of silicon germanium (SiGe) and stress to previously unstrained Si devices is promising to solve this dilemma, which boost device performance significantly while taking advantage of the existing large scale Si manufacture infrastructure. Moreover, Si and Ge based photonic devices hold the potential to improve the speed of on-chip data transmission and long distance communications by orders of magnitudes. Despite its rapid development in the last decade, the application of SiGe and stress technology brings integration challenges such as SiGe interdiffusion, dopant diffusion and activation, stress distribution and relaxation. These issues degrade device performance and make the product development process complicated, time-consuming and costly. The proposed research is to address these challenges. In this research, we aim to understand SiGe compatibility with Si (i.e. interdiffusion, dopant diffusion and activation), which is crucial for SiGe device structure design, dopant introduction, and thermal processing. In addition, stress enhancement mechanisms and limits will be studied to provide key knowledge for the design of stressor structures and strength. Finally, stress simulations and modeling for advanced stress techniques will help resolving the controversy on the mechanisms behind reverse embedded SiGe structure and reveal the stress generation and transfer process of in-plane bonding technique. The outcome of this research will see its applications in building better performance computers and much higher speed communication networks.

几十年来，以硅（Si）为基础的半导体工业对绘制现代经济和技术史的大致轮廓至关重要。然而，在过去的十年中，对性能增强的不断增长的需求已经将Si推向了它的物理极限。硅锗（SiGe）和应力的引入有望解决这一难题，在利用现有大规模硅制造基础设施的同时，显著提高器件性能。此外，基于硅和锗的光子器件有潜力将片上数据传输和长距离通信的速度提高几个数量级。尽管近十年来SiGe技术发展迅速，但SiGe与应力技术的应用带来了SiGe互扩散、掺杂物扩散与活化、应力分布与松弛等集成挑战。这些问题降低了设备性能，使产品开发过程变得复杂、耗时和昂贵。拟议的研究就是为了解决这些挑战。