SiGe and stress technology for next generations of high performance electronic and photonic devices

几十年来，硅（Si）基半导体工业对于绘制现代经济和技术史的大致轮廓至关重要。然而，在过去的十年中，对性能增强的不断增长的需求已经将Si推向了其物理极限。将硅锗（SiGe）和应力引入到先前未应变的Si器件有望解决这一困境，这在利用现有的大规模Si制造基础设施的同时显著提高了器件性能。此外，基于Si和Ge的光子器件具有以数量级提高片上数据传输和长距离通信的速度的潜力。尽管SiGe和应力技术在过去十年中发展迅速，但其应用带来了诸如SiGe互扩散、掺杂剂扩散和激活、应力分布和弛豫等集成挑战。这些问题降低了器件性能，并使产品开发过程复杂、耗时且成本高昂。拟议的研究是为了应对这些挑战。

For decades, the silicon (Si) based semiconductor industry has been crucial to drawing the broad outlines of the modern history of economics and technology. In the past decade, however, the ever increasing demands on performance enhancement have pushed Si to its physical limits. The introduction of silicon germanium (SiGe) and stress to previously unstrained Si devices is promising to solve this dilemma, which boost device performance significantly while taking advantage of the existing large scale Si manufacture infrastructure. Moreover, Si and Ge based photonic devices hold the potential to improve the speed of on-chip data transmission and long distance communications by orders of magnitudes. Despite its rapid development in the last decade, the application of SiGe and stress technology brings integration challenges such as SiGe interdiffusion, dopant diffusion and activation, stress distribution and relaxation. These issues degrade device performance and make the product development process complicated, time-consuming and costly. The proposed research is to address these challenges.