Modeling and simulations of SiGe interdiffusion and ion implantation in CSUPREM

CSUPREM 中 SiGe 相互扩散和离子注入的建模和仿真

• 批准号: 451484-2013
• 负责人: Xia, Guangrui
• 金额: $ 1.56万
• 依托单位: University of British Columbia
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=554726
• 关键词: Modeling; simulations; SiGe; interdiffusion; ion

For decades, semiconductor industry has been crucial to drawing the broad outlines of the modern history of economics and technology. It is a high-tech industry with high cost in product R&D. Therefore, computer modeling and simulations for semiconductor materials, devices, circuits and manufacturing processes are widely used in product R&D for cost reduction. It is estimated that it can reduce the R&D cost by as much as 35%, and time of development by 26% [ITRS 2007].

几十年来，半导体工业一直是绘制现代经济和技术史的大致轮廓的关键。它是一个高科技产业，产品研发成本高。因此，半导体材料、器件、电路和制造工艺的计算机建模和仿真被广泛用于产品研发以降低成本。据估计，它可以减少多达35%的研发成本，并减少26%的开发时间[ITRS 2007]。