Modeling and simulations of SiGe interdiffusion and ion implantation in CSUPREM
Modeling and simulations of SiGe interdiffusion and ion implantation in CSUPREM
批准号:
451484-2013
负责人:
Xia, Guangrui
金额:
$1.56万
依托单位国家:
加拿大
项目类别:
Collaborative Research and Development Grants
财政年份:
2014
资助国家:
加拿大
项目状态:
已结题
起止时间:
2014-01-01 至 2015-12-31
中文摘要
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英文摘要
For decades, semiconductor industry has been crucial to drawing the broad outlines of the modern history of economics and technology. It is a high-tech industry with high cost in product R&D. Therefore, computer modeling and simulations for semiconductor materials, devices, circuits and manufacturing processes are widely used in product R&D for cost reduction. It is estimated that it can reduce the R&D cost by as much as 35%, and time of development by 26% [ITRS 2007].
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Germanium for next generation photonic and microelectronic devices
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批准号:RGPIN-2017-04698
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.5万
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财政年份:2021
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负责人:Xia, Guangrui
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依托单位:
Germanium for next generation photonic and microelectronic devices
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批准号:RGPIN-2017-04698
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.75万
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财政年份:2020
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负责人:Xia, Guangrui
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依托单位:
Germanium for next generation photonic and microelectronic devices
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批准号:RGPIN-2017-04698
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.75万
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财政年份:2019
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负责人:Xia, Guangrui
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依托单位:
Germanium for next generation photonic and microelectronic devices
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批准号:RGPIN-2017-04698
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.75万
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财政年份:2018
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负责人:Xia, Guangrui
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依托单位:
Germanium for next generation photonic and microelectronic devices
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批准号:RGPIN-2017-04698
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.75万
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财政年份:2017
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负责人:Xia, Guangrui
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依托单位:
SiGe and stress technology for next generations of high performance electronic and photonic devices
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批准号:372060-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2015
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负责人:Xia, Guangrui
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依托单位:
SiGe and stress technology for next generations of high performance electronic and photonic devices
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批准号:372060-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2014
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负责人:Xia, Guangrui
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依托单位:
Modeling and simulations of SiGe interdiffusion and ion implantation in CSUPREM
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批准号:451484-2013
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项目类别:Collaborative Research and Development Grants
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资助金额:$1.36万
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财政年份:2013
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负责人:Xia, Guangrui
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依托单位:
SiGe and stress technology for next generations of high performance electronic and photonic devices
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批准号:372060-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2013
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负责人:Xia, Guangrui
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依托单位:
SiGe and stress technology for next generations of high performance electronic and photonic devices
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批准号:372060-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2012
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负责人:Xia, Guangrui
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依托单位:
SiGe and stress technology for next generations of high performance electronic and photonic devices
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批准号:372060-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2011
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负责人:Xia, Guangrui
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依托单位:
Three-dimensional stress and Si-Ge interdiffusion modeling for semiconductor process simulation software CSUPREM
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批准号:396181-2010
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项目类别:Collaborative Research and Development Grants
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资助金额:$1.45万
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财政年份:2011
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负责人:Xia, Guangrui
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依托单位:
SiGe and stress technology for next generations of high performance electronic and photonic devices
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批准号:372060-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2010
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负责人:Xia, Guangrui
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依托单位:
Three-dimensional stress and Si-Ge interdiffusion modeling for semiconductor process simulation software CSUPREM
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批准号:396181-2010
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项目类别:Collaborative Research and Development Grants
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资助金额:$1.45万
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财政年份:2010
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负责人:Xia, Guangrui
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依托单位:
SiGe and stress technology for next generations of high performance electronic and photonic devices
-
批准号:372060-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2009
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负责人:Xia, Guangrui
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依托单位:
国内基金
海外基金
Galaxy Analytical Modeling
Evolution (GAME) and cosmological
hydrodynamic simulations.
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批准号:
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项目类别:省市级项目
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资助金额:10.0万元
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批准年份:2025
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负责人:Antonios Katsianis
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依托单位: