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A fundamental analysis of abrasive slurry hydrodynamics in Chemical-Mechanical Polishing (CMP)

A fundamental analysis of abrasive slurry hydrodynamics in Chemical-Mechanical Polishing (CMP)
化学机械抛光 (CMP) 中磨料浆流体动力学的基本分析
批准号:
RGPIN-2015-05420
负责人:
Sanders, RSean
金额:
$2.91万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2017
资助国家:
加拿大
项目状态:
已结题
起止时间:
2017-01-01 至 2018-12-31

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中文摘要
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英文摘要
Chemical-mechanical polishing (CMP) is widely used in the microelectronics and semiconductor industries. Surface films (often just nanometers thick) are removed by exposing the chip, or wafer, to a flowing slurry consisting of inert abrasive particles suspended in a chemically reactive solution. The chemical components and the abrasive particles work synergistically to remove a surface layer of material.
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Mixing and transport of particles and droplets co-suspended in a liquid-continuous phase
  • 批准号:
    RGPIN-2020-04848
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.4万
  • 财政年份:
    2021
  • 负责人:
    Sanders, RSean
  • 依托单位:
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  • 批准号:
    RGPIN-2020-04848
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
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  • 负责人:
    Sanders, RSean
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