A fundamental analysis of abrasive slurry hydrodynamics in Chemical-Mechanical Polishing (CMP)

化学机械抛光 (CMP) 中磨料浆流体动力学的基本分析

• 批准号: RGPIN-2015-05420
• 负责人: Sanders, RSean
• 金额: $ 2.91万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=638042
• 关键词: fundamental; analysis; abrasive; slurry; hydrodynamics

Chemical-mechanical polishing (CMP) is widely used in the microelectronics and semiconductor industries. Surface films (often just nanometers thick) are removed by exposing the chip, or wafer, to a flowing slurry consisting of inert abrasive particles suspended in a chemically reactive solution. The chemical components and the abrasive particles work synergistically to remove a surface layer of material.

化学机械抛光（CMP）广泛应用于微电子和半导体工业。表面膜（通常只有纳米厚）是通过将芯片或晶片暴露在由悬浮在化学反应溶液中的惰性磨料颗粒组成的流动浆料中来去除的。化学组分和磨料颗粒协同作用以去除材料的表面层。