Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits

面积高效的低功耗射频和毫米波 CMOS 集成电路

基本信息

  • 批准号:
    RGPIN-2014-06048
  • 负责人:
  • 金额:
    $ 2.26万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Discovery Grants Program - Individual
  • 财政年份:
    2018
  • 资助国家:
    加拿大
  • 起止时间:
    2018-01-01 至 2019-12-31
  • 项目状态:
    已结题

项目摘要

Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits**In the last two decades, the implementation of radio frequency (RF) building blocks of wireless transceivers along with the rest of systems on a single Complementary Metal Oxide Semiconductor (CMOS) silicon chip has enabled the low-cost integration of several wireless platforms in today's portable electronic devices such as smartphones, tablets, wireless sensors, and many others. However, the RF part of the system typically occupies a significant portion of silicon chip area because of the necessity to use on-chip passive components particularly on-chip spiral inductors. In addition, RF circuits usually consume a significant portion of total chip power. Growing consumer demand for increased functionality at reduced cost and extended battery life necessitates greater research efforts on design and implementation of area-efficient low-power radio frequency and millimeter-wave (MMW) CMOS integrated circuits (ICs) and systems to lower microchip fabrication cost and reduce power consumption. The long-term objective of the proposed research is to develop new device, circuit, and system structures to enable economical CMOS-based solutions for widespread adoption of radio-frequency and mm-wave devices in mainstream consumer electronic products. **To lower the cost of RF and MMW ICs, we plan to develop highly-linear low-noise transistor-based passive components (TBPCs) to replace their area-inefficient passive counterparts in major RF building blocks. These TBPCs such as active inductors emulate the electrical behavior of their passive counterparts only occupying a fraction of the chip area of their passive counterparts. Using the same concept, we plan develop new passive devices such as negative capacitors and inductors for which no passive alternatives exist in order to enhance the performance of RF/MMW circuits and systems. The TBPCs such as negative resistors and capacitors can potentially compensate for the losses and cancel the effect of parasitic capacitors of RF/MMW circuits resulting in gain enhancement, bandwidth extension, and lower power consumption. In order to extend the battery life of portable wireless devices, we plan to work on lowering the power consumption of RF/MMW circuits through development of RF circuits in the moderate inversion region where the ratio of transistor gain to the power consumption is the highest. In addition, fully integrated RF energy harvesting systems will be used to charge the device battery on the go to further extend the battery life of portable electronic devices. Finally, to enable new MMW wireless technologies become commercially available in mainstream electronic products, we aim to design and implement MMW integrated circuits in low-cost CMOS process. **In this project, novel structures of RF/MMW devices, circuits, and systems will be developed for variety of applications including high-data-rate wireless communication, wireless sensors, biomedical imaging, security, and many others. As implemented in CMOS technology, these new devices lower the cost and reduce the size of final product making them economically feasible for mainstream consumers. We expect to create new knowledge in the field as the proposed devices will be developed to outperform the previously reported designs in terms performance, area efficiency, and power efficiency and consumption. This new knowledge can be commercialized by start-up companies or through licensing to established corporations and will be disseminated in respected publications to advance the research in the field. In addition, several graduate students will be trained throughout this project as integrated circuits and systems designers.
**在过去的二十年中,无线收发器的射频(RF)构建模块以及其他系统在单个互补金属氧化物半导体(CMOS)硅芯片上的实现,使当今便携式电子设备(如智能手机,平板电脑,无线传感器等)中的几个无线平台的低成本集成成为可能。然而,由于必须使用片上无源元件,特别是片上螺旋电感器,系统的射频部分通常占据硅芯片面积的很大一部分。此外,射频电路通常消耗芯片总功率的很大一部分。消费者对以更低的成本增加功能和延长电池寿命的需求日益增长,这就需要在设计和实现面积高效的低功耗射频和毫米波(MMW) CMOS集成电路(ic)和系统方面加大研究力度,以降低微芯片制造成本并降低功耗。该研究的长期目标是开发新的器件、电路和系统结构,使基于cmos的经济解决方案能够广泛应用于主流消费电子产品中的射频和毫米波器件。**为了降低射频和毫米波集成电路的成本,我们计划开发基于晶体管的高线性低噪声无源元件(tbpc),以取代主要射频构建模块中面积低效的无源元件。这些tbpc,如有源电感器,模拟其无源对应物的电行为,仅占其无源对应物的一小部分芯片面积。使用相同的概念,我们计划开发新的无源器件,如负电容和电感,这些无源器件没有替代品,以提高射频/毫米波电路和系统的性能。负电阻器和负电容等tbpc可以潜在地补偿损耗并消除射频/毫米波电路中寄生电容的影响,从而提高增益、扩展带宽和降低功耗。为了延长便携式无线设备的电池寿命,我们计划通过在晶体管增益与功耗之比最高的中等反转区域开发RF电路来降低RF/MMW电路的功耗。此外,完全集成的射频能量收集系统将用于在移动中为设备电池充电,以进一步延长便携式电子设备的电池寿命。最后,为了使新的毫米波无线技术在主流电子产品中商业化,我们的目标是在低成本的CMOS工艺中设计和实现毫米波集成电路。**在这个项目中,射频/毫米波器件、电路和系统的新结构将被开发用于各种应用,包括高数据速率无线通信、无线传感器、生物医学成像、安全等。由于采用CMOS技术,这些新器件降低了成本,减小了最终产品的尺寸,使其在经济上对主流消费者可行。我们期望在该领域创造新的知识,因为所提出的设备将在性能、面积效率、功率效率和功耗方面优于先前报道的设计。这种新知识可以由新成立的公司或通过向已成立的公司颁发许可证而商业化,并将在受人尊敬的出版物中传播,以促进该领域的研究。此外,几名研究生将在整个项目中接受集成电路和系统设计师的培训。

项目成果

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Moez, Kambiz其他文献

High-Quality-Factor Active Capacitors for Millimeter-Wave Applications
A 3.2 V-15 dBm Adaptive Threshold-Voltage Compensated RF Energy Harvester in 130 nm CMOS
An RF-to-DC Rectifier With High Efficiency Over Wide Input Power Range for RF Energy Harvesting Applications
A Highly-Efficient RF Energy Harvester Using Passively-Produced Adaptive Threshold Voltage Compensation
Systematic Co-Design of Matching Networks and Rectifiers for CMOS Radio Frequency Energy Harvesters

Moez, Kambiz的其他文献

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{{ truncateString('Moez, Kambiz', 18)}}的其他基金

Ultra-Low-Power Wireless Transceivers Powered by Radio Frequency Energy Harvesting
由射频能量收集供电的超低功耗无线收发器
  • 批准号:
    RGPIN-2022-03475
  • 财政年份:
    2022
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Discovery Grants Program - Individual
Self-Powered Wireless Electrocardiogram Device
自供电无线心电图仪
  • 批准号:
    571237-2022
  • 财政年份:
    2021
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Idea to Innovation
Development of self-powered wireless sensor nodes for internet of things applications and beyond
开发用于物联网应用及其他领域的自供电无线传感器节点
  • 批准号:
    568672-2021
  • 财政年份:
    2021
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Alliance Grants
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
  • 批准号:
    RGPIN-2014-06048
  • 财政年份:
    2021
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Discovery Grants Program - Individual
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
  • 批准号:
    RGPIN-2014-06048
  • 财政年份:
    2020
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Discovery Grants Program - Individual
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
  • 批准号:
    RGPIN-2014-06048
  • 财政年份:
    2019
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Discovery Grants Program - Individual
GaN MOSFET Power Amplifiers for Resilient Satellite Communications******
用于弹性卫星通信的 GaN MOSFET 功率放大器******
  • 批准号:
    536523-2018
  • 财政年份:
    2018
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Engage Grants Program
RF-Powered Wireless Pressure Micro-Sensor for Fracking Operation Monitoring
用于监测压裂作业的射频供电无线压力微型传感器
  • 批准号:
    521995-2017
  • 财政年份:
    2017
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Engage Grants Program
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
  • 批准号:
    RGPIN-2014-06048
  • 财政年份:
    2017
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Discovery Grants Program - Individual
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
  • 批准号:
    RGPIN-2014-06048
  • 财政年份:
    2016
  • 资助金额:
    $ 2.26万
  • 项目类别:
    Discovery Grants Program - Individual

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面积高效的低功耗射频和毫米波 CMOS 集成电路
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