GaN MOSFET Power Amplifiers for Resilient Satellite Communications******

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The objective of this research project is to assist TransEON, an Edmonton-based company, in the development of microwave-frequency power amplifier integrated circuits in their GaN MOSFET platform. The project would be a pioneering effort toward development of microwave circuits and systems using GaN MOSFET technology with the promise of achieving better performance for development of wireless communication systems particularly for satellite communication applications. The development of low-cost high-performance microwave circuits will place the industry partner at a significant technological and economic advantage to the competitors. This will help diversify Alberta economy by developing products with ICT applications based on locally-developed nanotechnology.