GaN MOSFET Power Amplifiers for Resilient Satellite Communications******

该研究项目的目的是帮助总部位于埃德蒙顿的TransEON公司在其GaN MOSFET平台上开发微波频率功率放大器集成电路。该项目将是利用GaN MOSFET技术开发微波电路和系统的开创性努力，有望为无线通信系统的开发，特别是卫星通信应用实现更好的性能。低成本高性能微波电路的开发将使该行业合作伙伴相对于竞争对手处于显著的技术和经济优势。这将有助于艾伯塔省经济的多样化，开发基于当地开发的纳米技术的ICT应用产品。

The objective of this research project is to assist TransEON, an Edmonton-based company, in the development of microwave-frequency power amplifier integrated circuits in their GaN MOSFET platform. The project would be a pioneering effort toward development of microwave circuits and systems using GaN MOSFET technology with the promise of achieving better performance for development of wireless communication systems particularly for satellite communication applications. The development of low-cost high-performance microwave circuits will place the industry partner at a significant technological and economic advantage to the competitors. This will help diversify Alberta economy by developing products with ICT applications based on locally-developed nanotechnology.