Towards 5 nm and Beyond: Understanding Nanoscale Transistors for Future Electronics

距离晶体管的5纳米栅长只有十年的时间了，工业界和大学对电子设备的研究已经将重点转移到硅中的新晶体管架构上，如多栅晶体管或“FinFET”，以及新的2D材料，如石墨烯、MoS2和磷烯。这些器件和材料受非经典和非直觉原则的支配。*因此，研究计划的目的有两个：(1)使用半经典和量子力学方法创造理解，帮助确定未来电子产品的最佳可能途径，从而促进全球努力，将“摩尔定律”扩展到2028年及以后；(2)培训加拿大最先进的和新兴的电子技术方面的高素质人才(HQP)。这两项活动将帮助加拿大在继续向纳米级发展的过程中参与电子学并从中受益。*该计划已经导致了几篇关于电子产品新材料使用的研究文章，这些文章都发表在领先的期刊上，如碳纳米管和石墨烯。它还导致了新的学术计划和新的课程，以培训和教育加拿大学生在最先进和新兴的电子产品方面，细节也已经公布，以便研究界的其他人可以实施类似的策略。该计划培养的所有HQP都处于有利地位，在领先的机构和行业拥有强大的电子职业生涯。*该计划涉及世界领先的电子公司以及国际学者的行业合作，不仅改善了HQP的研究活动，也改善了培训环境和机会。*正在进行的工作将考虑传统硅的中长期替代方案，重点是新器件的模拟和射频(RF)性能。*具体活动将包括：1(A)了解随着规模的继续，“FIN量化”对FinFET晶体管RF指标的影响；1(B)随着规模的继续，评估在FinFET中散射的重要性；1(C)考虑硅以外的新的FIN材料；2(A)评估应变的影响以提高MoS2的性能；以及2(B)评估磷烯的射频潜力。*总体上，该计划包括在加拿大和国际上日益重要的领域的最先进的研究、工业合作和HQP培训。**

With 5-nm gate lengths for transistors only a decade away, industry and university research in electronic devices has shifted its focus to new transistor architectures in silicon, such as the multi-gate transistor, or “FinFET,” and to new 2D materials, such as graphene, MoS2, and phosphorene. Such devices and materials are governed by non-classical and non-intuitive principles.******The purpose of the research program is hence twofold: (1) to use semi-classical and quantum-mechanical approaches to create understanding that will help identify the best possible paths for future electronics, thereby contributing to the worldwide effort to extend “Moore's law” to the year 2028 and beyond; (2) to train Canadian highly qualified personnel (HQP) in state-of-the-art and emerging technologies for electronics. Both activities will help position Canada to participate in and benefit from opportunities in electronics as it continues its evolution into the nanoscale.******The program has already led to several research contributions, all appearing in leading journals, on the use of new materials for electronics, such as carbon nanotubes and graphene. It has also led to new academic programs and new curricula to train and educate Canadian students in state-of-the-art and emerging electronics, the details of which have also been published so that others in the research community can implement similar strategies. All of the HQP trained by the program have been well placed, with strong technical career paths in electronics at leading institutions and leading industry.******The program involves industrial collaboration from world-leading firms in electronics, as well as international academics, enhancing not only the research activities but also the training environment and opportunities for HQP.******Ongoing work will consider both medium- and long-range alternatives to conventional silicon, with an emphasis on the analog and radio-frequency (RF) performance of new devices. ******Specific activities will include: 1(a) understanding the impact of “fin quantization” on the RF metrics of FinFET transistors as scaling continues; 1(b) assessing the importance of scattering in FinFETs as scaling continues; 1(c) considering new fin materials beyond silicon; 2(a) assessing the impact of strain to enhance the performance of MoS2; and 2(b) assessing the RF potential of phosphorene.******Overall, the program encompasses state-of-the-art research, industrial collaboration, and HQP training in an area of growing Canadian and international importance. **