Towards 5 nm and Beyond: Understanding Nanoscale Transistors for Future Electronics

迈向 5 纳米及以上：了解未来电子产品的纳米级晶体管

• 批准号: RGPIN-2016-06160
• 负责人: Vaidyanathan, Mani
• 金额: $ 2.26万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=710203
• 关键词: Towards; nm; Beyond; Understanding; Nanoscale

With 5-nm gate lengths for transistors only a decade away, industry and university research in electronic devices has shifted its focus to new transistor architectures in silicon, such as the multi-gate transistor, or “FinFET,” and to new 2D materials, such as graphene, MoS2, and phosphorene. Such devices and materials are governed by non-classical and non-intuitive principles. The purpose of the research program is hence twofold: (1) to use semi-classical and quantum-mechanical approaches to create understanding that will help identify the best possible paths for future electronics, thereby contributing to the worldwide effort to extend “Moore's law” to the year 2028 and beyond; (2) to train Canadian highly qualified personnel (HQP) in state-of-the-art and emerging technologies for electronics. Both activities will help position Canada to participate in and benefit from opportunities in electronics as it continues its evolution into the nanoscale. The program has already led to several research contributions, all appearing in leading journals, on the use of new materials for electronics, such as carbon nanotubes and graphene. It has also led to new academic programs and new curricula to train and educate Canadian students in state-of-the-art and emerging electronics, the details of which have also been published so that others in the research community can implement similar strategies. All of the HQP trained by the program have been well placed, with strong technical career paths in electronics at leading institutions and leading industry. The program involves industrial collaboration from world-leading firms in electronics, as well as international academics, enhancing not only the research activities but also the training environment and opportunities for HQP. Ongoing work will consider both medium- and long-range alternatives to conventional silicon, with an emphasis on the analog and radio-frequency (RF) performance of new devices. Specific activities will include: 1(a) understanding the impact of “fin quantization” on the RF metrics of FinFET transistors as scaling continues; 1(b) assessing the importance of scattering in FinFETs as scaling continues; 1(c) considering new fin materials beyond silicon; 2(a) assessing the impact of strain to enhance the performance of MoS2; and 2(b) assessing the RF potential of phosphorene. Overall, the program encompasses state-of-the-art research, industrial collaboration, and HQP training in an area of growing Canadian and international importance.

距离晶体管的5纳米栅长只有十年的时间了，工业界和大学对电子设备的研究已经将重点转移到硅中的新晶体管架构上，如多栅晶体管或“FinFET”，以及新的2D材料，如石墨烯、MoS2和磷烯。这样的装置和材料受到非经典和非直觉原则的支配。 因此，该研究计划的目的有两个：(1)使用半经典和量子力学方法来创造理解，帮助确定未来电子产品的最佳可能途径，从而促进全球努力，将“摩尔定律”扩展到2028年及以后；(2)培训加拿大最先进的和新兴的电子技术方面的高素质人才(HQP)。这两项活动将有助于加拿大在继续向纳米级演进的过程中参与电子领域的机遇并从中受益。 该计划已经产生了几篇研究论文，都发表在领先的期刊上，涉及电子产品的新材料的使用，如碳纳米管和石墨烯。它还导致了新的学术计划和新的课程，以培训和教育加拿大学生在最先进和新兴的电子产品方面，细节也已经公布，以便研究界的其他人可以实施类似的策略。所有由该计划培训的HQP都处于有利地位，在领先的机构和领先的行业拥有强大的电子技术职业道路。 该计划涉及世界领先的电子公司以及国际学者的产业合作，不仅加强了研究活动，还加强了HQP的培训环境和机会。 正在进行的工作将考虑常规硅的中长期替代方案，重点是新设备的模拟和射频(RF)性能。 具体活动将包括：1(A)了解随着比例的继续，“鳍量化”对FinFET晶体管射频指标的影响；1(B)随着比例的继续，评估在FinFET中散射的重要性；1(C)考虑硅以外的新的鳍材料；2(A)评估应变对提高MoS2性能的影响；以及2(B)评估磷烯的射频潜力。 总体而言，该计划包括在加拿大和国际上日益重要的领域进行最先进的研究、行业合作和HQP培训。