Physical vapour deposition of ferroelectric and multiferroic tunnel junctions

铁电和多铁隧道结的物理气相沉积

• 批准号: 506953-2017
• 负责人: Ruediger, Andreas
• 金额: $ 14.42万
• 依托单位: Institut national de la recherche scientifique
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=694162
• 关键词: Physical; vapour; deposition; ferroelectric; multiferroic

Ferroelectric tunnel junctions (FTJs) are the strongest contender to replace flash memory in integrated computer circuitry as they combine low-cost, non-volatility, small footprint, fast read- write cycles, low energy consumption, non-destructive readout and, since very recently, cmos-compatibility. The principle of operation is based on resistive switching between two conductive states that, in the case of FTJs are provided through the distinct state of spontaneous polarization. Intrinsically only a few unit cells thick, they are also suited for integration in crossbar arrays to combine features of memory and logic thus enabling innovative circuit architectures with tremendous potential for energy savings during processor operation. We have very recently demonstrated FTJs with proven CMOS compatibility, using only materials, HfZrO2, that are already part of cmos processing and keeping all process parameters, in particular the deposition temperature, within tolerances. With the proof of concept submitted for patent in collaboration with the industrial partner, the further development of these electronic functions relies for one on the optimization of process parameters for RF magnetron sputtering, a process to be readily adopted from laboratory to fabrication scale. For the other, parasitic switching effects, such as filamentary-mediated resistive switching need to be excluded and the most common failure mechanisms, e.g. point defects, will have to be identified. For this purpose, we collaborate with the electron microscopy and spectroscopy (PEEM) beam line at the Canadian Light Source, Canada's most advanced infrastructure for nanoscale chemical and structural imaging. In order to determine the full potential of these electronic tiles for given specifications (mainly the resistance ratio between on and off state), we collaborate with the NSERC/IBM Canadian industrial research chair to guide the integration towards the most promising circuit architecture. The main objective of this partnership is to develop an industrial main-frame compatible process for a novel non-volatile memory generation to outperform flash in terms of write speed, energy consumption and endurance.

铁电隧道结（FTJ）是替代集成计算机电路中的闪存的最强有力的竞争者，因为它们联合收割机低成本、非易失性、小占地面积、快速读写周期、低能耗、非破坏性读出以及最近的CMOS兼容性。工作原理基于两种导电状态之间的电阻切换，在FTJ的情况下，通过不同的自发极化状态提供电阻切换。内部只有几个单位单元厚，它们也适合于集成在交叉阵列中，以联合收割机的存储器和逻辑功能，从而使创新的电路架构具有巨大的潜力，在处理器操作期间节省能源。我们最近展示了具有CMOS兼容性的FTJ，仅使用已经成为CMOS工艺一部分的HfZrO 2材料，并将所有工艺参数（特别是沉积温度）保持在公差范围内。通过与工业合作伙伴合作提交的专利概念验证，这些电子功能的进一步开发依赖于RF磁控溅射工艺参数的优化，该工艺易于从实验室到制造规模采用。另一方面，寄生开关效应，如介导电阻开关需要被排除在外，最常见的故障机制，如点缺陷，将不得不被识别。为此，我们与加拿大光源的电子显微镜和光谱学（PEEM）光束线合作，这是加拿大最先进的纳米级化学和结构成像基础设施。为了确定这些电子瓦片在给定规格（主要是导通和关断状态之间的电阻比）下的全部潜力，我们与NSERC/IBM加拿大工业研究主席合作，以指导最有前途的电路架构的集成。此次合作的主要目标是开发一种工业主机兼容工艺，用于新一代非易失性存储器，在写入速度、能耗和耐用性方面优于闪存。