Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor

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Gallium Nitride (GaN) transistors are emerging as a powerful (literally) new technology to meet tomorrow's needs for high power switching devices. These new transistors use existing know-how in advanced III-V semiconductors, and offer significant performance advantages over conventional silicon-based solutions while being cost-competitive. However, they need to push the electrical and thermal boundaries by improving device design and packaging to deliver actual power performance closer to the theoretical capabilities, and demonstrating improved reliability. The team presenting this proposal combines an emerging global pioneer in commercial GaN transistor technology (Ottawa-based GaN Systems) and the highly-experienced, multidisciplinary research team at the Université de Sherbrooke. Together, the partners propose a systematic study of alternative processing technologies to enhance GaN Systems' competitive edge. Focussing on enhancement of design parameters critical to high power handling (e.g: thermal resistance, breakdown voltage), the Sherbrooke researchers will leverage their capabilities in materials deposition and wafer processing to identify the most effective solutions for future manufacture of cost-competitive devices. Novel to this study is an exploration of major performance enhancements using special post-fabrication back-end process steps on finished commercial foundry wafers, together with integrated drivers for high voltage operation. This would enable GaN Systems to source devices from multiple facilities around the globe, boosting the power performance with a "made in Canada" process step.Essential to the outcomes of this study will be an understanding of how degradation and failure mechanisms prevail in this unique wide-bandgap material. The combined forces of GaN Systems (for detailed understanding of device electrical and thermal parameters) with the materials, processing and analytical resources at Sherbrooke, position this study to support a Canada-led power device innovation.