Atomic-Scale Electronics

预计到2030年，CMOS晶体管和技术的发展将达到5nm栅极长度。在这些或更大的维度上，块状材料的许多特性，包括带隙、能带图和载流子迁移率，都发生了巨大的变化，隧道作用占主导地位。巧合的是，为量子计算（QC）设想的基于室温隧道的耦合量子点（QD）设备也将在这些维度上变得可行。尽管由于特征尺寸的缩小和3D晶体管结构（如FinFET）的引入，集成密度继续遵循摩尔定律，但mosfet正在迅速接近其缩放极限。这将影响计算和无线通信的未来发展，这是当今数据科学、机器学习和物联网革命的支柱，它们依赖于不断增长的计算能力和数据速率，以及环境传感。为了继续提高CMOS的计算速度和功能，对于大批量、低成本、可扩展的QC量子比特和集成电路来说，对适合集成在生产硅平台上的各种通道材料和量子比特结构进行彻底研究是至关重要的。

The progression of CMOS transistors and technology is expected to reach 5nm gate length by the year 2030. At these dimensions and beyond, many of the properties of bulk materials, including the bandgap, the energy band diagrams, and carrier mobilities, undergo dramatic changes and tunneling dominates. Coincidentally, room-temperature tunneling-based coupled quantum-dot (QD) devices, envisioned for quantum computing (QC), will also become feasible at these dimensions. Although integration density has continued to follow Moore's law due to feature size shrinking and the introduction of 3D transistor structures such as the FinFET, MOSFETs are fast approaching their scaling limits. This will affect the future evolution of both computing and wireless communication, the pillars of today's revolution in data science, machine learning and the internet of things, which rely on ever-increasing computational power and data rates, and on ambient sensing. To continue computing speed and functionality improvement beyond the end of CMOS, it is critical that a variety of channel materials and qubit structures suitable for integration in a production silicon platform be thoroughly investigated for large volume and low-cost, scalable QC qubits and integrated circuits. This proposal addresses (i) the continued scaling of computational power by exploring novel atomic-scale quantum-computing (QC) hardware in CMOS foundry processes, which can be integrated on the same die with classical CMOS logic and millimeter-wave electronics, and (ii) transceiver architectures exploiting the un-chartered 140-300 GHz frequency band for qubit spin control/readout, ambient sensing, instrumentation, and wireless communications at over 100 Gb/s. The proposed qubit ICs consist of coupled-QD electron and hole spin qubits, placed in the atomic-scale channel of multi-gate n- and p-MOSFETs, and of 60-240GHz spin control and spin readout circuits integrated on the same die. As a radical breakthrough, the fabricated qubits will feature mode energy level splitting on the order of 0.25-1 meV corresponding to Rabi frequencies in the 60-240GHz range, suitable for operation at 312 degrees Kelvin, two orders of magnitude higher than today's qubits. The tuned mm-wave circuits allow for 10-20ps spin control pulses which help to filter out wideband thermal noise and make the proposed qubits and QC logic more tolerant of short spin coherence and relaxation times. Thermal noise filtering may lead to even higher temperature operation for a given energy-level splitting.