Cryogenic probestation for mm-wave monolithic quantum computing integrated circuits

毫米波单片量子计算集成电路低温探测

• 批准号: RTI-2019-00550
• 负责人: Voinigescu, Sorin
• 金额: $ 10.93万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Research Tools and Instruments
• 财政年份: 2018
• 资助国家: 加拿大
• 起止时间: 2018-01-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=667861
• 关键词: Cryogenic; probestation; mm; wave; monolithic

This equipment application aims to obtain a cryogenic probe station suitable for testing novel single- and coupled quantum well electron- and hole-spin qubits and monolithically integrated quantum computing processors consisting of qubits and associated millimetre-wave spin-manipulation and readout circuitry. These circuits and qubits are manufactured in production CMOS technology and operate at temperatures of 2 K, more than an order of magnitude higher than current state-of-the-art quantum computing hardware. The requested probe station is unique and custom designed to allow for on-wafer qubit and integrated circuits testing at temperatures down to 2 K and at frequencies up to 67 GHz in the presence of adjustable magnetic fields up to 2.5 Tesla. The test arms of the probestation are expandable to cover the 140-220GHz range.***The research on monolithic quantum processors is funded by the applicant's NSERC Strategic and NSERC Discovery grants and supported by Intel Toronto and with in-kind fabrication runs by GlobalFoundries. It addresses the continued scaling of computational power by exploring novel atomic-scale quantum-computing hardware in CMOS foundry processes, which harness tunneling and can be integrated on the same die with classical CMOS logic and microwave analog electronics.***The objective is to experimentally demonstrate coupled quantum-dot qubit structures based on thin Si, and SiGe films on ultra-thin buried oxide on silicon substrates. Single- and multiple-qubits will be designed, fabricated and tested in commercial 22-nm and 12-nm Fully-Depleted Silicon on Insulator (SOI) foundry technology. The qubits will be realized using series-stacked n-MOSFET and p-MOSFET cascodes with multiple gates where quantum dots will be formed in the thin semiconductor film below each top gate, while the tunneling barrier and, therefore, electron or hole entanglement and exchange interaction between quantum dots will be controlled by the back-gate formed in the silicon substrate. The electron and hole spins will be manipulated using DC magnetic fields and mm-wave signals in the 30-220 GHz range applied to the quantum-dot gates. Along with shrinking dimensions, higher magnetic fields and higher frequency signals applied to the gates result in higher energy splitting in the quantum dots, enabling higher temperature operation. Ultimately, 77-K and room temperature operation is our goal. Low-cost, mass-produced, high-temperature quantum computers will revolutionize the IT industry and strengthen Canada's leadership in this field.

该设备应用的目的是获得一种低温探针站，适用于测试新型单量子阱和耦合量子阱电子和空穴自旋量子比特以及由量子比特和相关毫米波自旋操纵和读出电路组成的单片集成量子计算处理器。这些电路和量子位是在生产CMOS技术中制造的，并在2 K的温度下工作，比当前最先进的量子计算硬件高出一个数量级。 所要求的探针台是独特的，定制设计，允许在温度低至2 K和频率高达67 GHz的情况下，在高达2.5特斯拉的可调磁场的存在下进行晶圆量子位和集成电路测试。探测器的测试臂可扩展至140- 220 GHz范围。*单片量子处理器的研究由申请人的NSERC战略和NSERC发现资助，并由英特尔多伦多和GlobalFoundries提供实物制造支持。它通过在CMOS代工工艺中探索新型原子级量子计算硬件来解决计算能力的持续扩展问题，该硬件利用隧道效应，可以与经典CMOS逻辑和微波模拟电子器件集成在同一个芯片上。目的是实验证明耦合量子点量子位结构的基础上薄硅，硅衬底上的超薄埋氧层上的SiGe薄膜。单量子位和多量子位将在商业22纳米和12纳米全耗尽绝缘体上硅（SOI）铸造技术中设计、制造和测试。量子位将使用具有多个栅极的串联堆叠的n-MOSFET和p-MOSFET共源共栅来实现，其中量子点将在每个顶栅极下方的薄半导体膜中形成，而隧穿势垒以及因此量子点之间的电子或空穴纠缠和交换相互作用将由硅衬底中形成的背栅极控制。电子和空穴自旋将使用施加到量子点门的30-220 GHz范围内的直流磁场和毫米波信号来操纵。沿着缩小的尺寸，施加到栅极的更高的磁场和更高的频率信号导致量子点中的更高的能量分裂，从而实现更高的温度操作。最终，77 K和室温操作是我们的目标。低成本、大规模生产的高温量子计算机将彻底改变IT行业，并加强加拿大在该领域的领导地位。