Cryogenic probestation for mm-wave monolithic quantum computing integrated circuits

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This equipment application aims to obtain a cryogenic probe station suitable for testing novel single- and coupled quantum well electron- and hole-spin qubits and monolithically integrated quantum computing processors consisting of qubits and associated millimetre-wave spin-manipulation and readout circuitry. These circuits and qubits are manufactured in production CMOS technology and operate at temperatures of 2 K, more than an order of magnitude higher than current state-of-the-art quantum computing hardware. The requested probe station is unique and custom designed to allow for on-wafer qubit and integrated circuits testing at temperatures down to 2 K and at frequencies up to 67 GHz in the presence of adjustable magnetic fields up to 2.5 Tesla. The test arms of the probestation are expandable to cover the 140-220GHz range.***The research on monolithic quantum processors is funded by the applicant's NSERC Strategic and NSERC Discovery grants and supported by Intel Toronto and with in-kind fabrication runs by GlobalFoundries. It addresses the continued scaling of computational power by exploring novel atomic-scale quantum-computing hardware in CMOS foundry processes, which harness tunneling and can be integrated on the same die with classical CMOS logic and microwave analog electronics.***The objective is to experimentally demonstrate coupled quantum-dot qubit structures based on thin Si, and SiGe films on ultra-thin buried oxide on silicon substrates. Single- and multiple-qubits will be designed, fabricated and tested in commercial 22-nm and 12-nm Fully-Depleted Silicon on Insulator (SOI) foundry technology. The qubits will be realized using series-stacked n-MOSFET and p-MOSFET cascodes with multiple gates where quantum dots will be formed in the thin semiconductor film below each top gate, while the tunneling barrier and, therefore, electron or hole entanglement and exchange interaction between quantum dots will be controlled by the back-gate formed in the silicon substrate. The electron and hole spins will be manipulated using DC magnetic fields and mm-wave signals in the 30-220 GHz range applied to the quantum-dot gates. Along with shrinking dimensions, higher magnetic fields and higher frequency signals applied to the gates result in higher energy splitting in the quantum dots, enabling higher temperature operation. Ultimately, 77-K and room temperature operation is our goal. Low-cost, mass-produced, high-temperature quantum computers will revolutionize the IT industry and strengthen Canada's leadership in this field.