2D- and Nano-materials techniques for semiconductor integration

点击翻译按钮获取中文摘要

For decades researchers were limited to designing devices that were lattice-matched to a commercially available substrates; more recently, however, researchers have learned how to design around some lattice mismatch. This work has resulted in state-of-the-art, strained-Si transistors, efficient (world-record breaking) solar cells, and Nobel-prize-winning LEDs. I have worked in high-quality semiconductor materials integration for the past 22 years, working in bonding, graded buffers, nano-materials, and lateral growth. Despite these advances, lattice mismatch is an ongoing challenge and limits device applications. In this proposal we will continue developing a lateral, lattice-mismatched, growth technique which we pioneered and patented. We will extend the technology to other materials and growth orientations. In this proposal, we are also pursuing a new lattice-mismatched growth technology using 2D materials. Using these technologies, we will build and demonstrate novel and high-performing electronic devices such as, solar cells, lasers, and detectors which can be integrated directly with Si-based integrated circuits. Funding this research program will enable diverse students to work with an advisor dedicated to training students in hard and soft skills and to provide mentoring and support to them throughout their careers.