Inexpensive, high-efficiency solar cells
Inexpensive, high-efficiency solar cells
批准号:
413185-2011
负责人:
Quitoriano, Nathaniel
金额:
$4.43万
依托单位:
依托单位国家:
加拿大
项目类别:
Strategic Projects - Group
财政年份:
2013
资助国家:
加拿大
项目状态:
已结题
起止时间:
2013-01-01 至 2014-12-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Abundant and sustainable energy production is required to mitigate climate change. Solar-derived, renewable energy is universally available and therefore has great potential to reduce climate change once it becomes cost-competitive. To achieve cost parity with the electric grid, at ~$0.04/kWh, both decreased photovoltaic (PV) price and increased efficiency are needed. Current state-of-the-art PV technologies fail to achieve cost parity because they are either inexpensive to fabricate but inefficient at capturing solar energy, or highly efficient but expensive to fabricate. Producing grid-parity energy will trigger enormous economic growth; however, in order to capitalize on this growth our Canadian industry partners, competing with dominant world players, especially in Japan, Germany and China, need to leverage innovative technologies such as that described in this proposal. To overcome this cost parity bottleneck, the PIand collaborators (Prof. Hong Guo and Prof. Kirk Bevan) propose to develop a novel semiconductor fabrication method, metal-catalyzed lateral growth, to enable third-generation PVs that are both inexpensive and highly efficient. Having worked in high-quality materials integration for the last 14 years, the PI has recently grown high-quality, semiconductor nanowires (Si and Ge) on amorphous (SiO2) and lattice-mismatched substrates. He now wants to expand this technology beyond the micro-scale to inexpensively cover large areas. This program will produce high-quality and high-efficiency semiconductors on inexpensive substrates that will build a sturdy foundation for third-generation PVs through selective, metal-catalyzed growth upon which grid-parityPVs can be built within the next few years. The high-quality personnel assigned to this program will gain valuable and broad experience in PVs, materials growth, materials characterization, device fabrication and device characterization. While the research described in this proposal will be directed at developing third-generation PVs, this technology could also be used more broadly and impact many other applications including large area electronics, computer processors, and telecommunications.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
2D- and Nano-materials techniques for semiconductor integration
-
批准号:RGPIN-2020-04747
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2022
-
负责人:Quitoriano, Nathaniel
-
依托单位:
2D- and Nano-materials techniques for semiconductor integration
-
批准号:RGPIN-2020-04747
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2021
-
负责人:Quitoriano, Nathaniel
-
依托单位:
2D- and Nano-materials techniques for semiconductor integration
-
批准号:RGPIN-2020-04747
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2020
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Lattice-Mismatched Liquid Phase Epitaxy
-
批准号:RGPIN-2015-03718
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$1.6万
-
财政年份:2019
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Lattice-Mismatched Liquid Phase Epitaxy
-
批准号:RGPIN-2015-03718
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$1.6万
-
财政年份:2018
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Lattice-Mismatched Liquid Phase Epitaxy
-
批准号:RGPIN-2015-03718
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$1.6万
-
财政年份:2017
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Lattice-Mismatched Liquid Phase Epitaxy
-
批准号:RGPIN-2015-03718
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$1.6万
-
财政年份:2016
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Lattice-Mismatched Liquid Phase Epitaxy
-
批准号:RGPIN-2015-03718
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$1.6万
-
财政年份:2015
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Fabrication and characterization of a new inverse constant-loss taper (CLT)
-
批准号:484683-2015
-
项目类别:Engage Grants Program
-
资助金额:$1.82万
-
财政年份:2015
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Inexpensive, high-efficiency solar cells
-
批准号:413185-2011
-
项目类别:Strategic Projects - Group
-
资助金额:$4.43万
-
财政年份:2014
-
负责人:Quitoriano, Nathaniel
-
依托单位:
The direct growth of high-quality semiconductors
-
批准号:386199-2010
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.48万
-
财政年份:2014
-
负责人:Quitoriano, Nathaniel
-
依托单位:
The direct growth of high-quality semiconductors
-
批准号:386199-2010
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.48万
-
财政年份:2013
-
负责人:Quitoriano, Nathaniel
-
依托单位:
The direct growth of high-quality semiconductors
-
批准号:386199-2010
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.48万
-
财政年份:2012
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Inexpensive, high-efficiency solar cells
-
批准号:413185-2011
-
项目类别:Strategic Projects - Group
-
资助金额:$8.87万
-
财政年份:2012
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Efficient, inexpensive mirror
-
批准号:417300-2011
-
项目类别:Engage Grants Program
-
资助金额:$1.82万
-
财政年份:2011
-
负责人:Quitoriano, Nathaniel
-
依托单位:
Inexpensive, high-efficiency solar cells
-
批准号:413185-2011
-
项目类别:Strategic Projects - Group
-
资助金额:$8.87万
-
财政年份:2011
-
负责人:Quitoriano, Nathaniel
-
依托单位:
The direct growth of high-quality semiconductors
-
批准号:386199-2010
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.48万
-
财政年份:2011
-
负责人:Quitoriano, Nathaniel
-
依托单位:
The direct growth of high-quality semiconductors
-
批准号:386199-2010
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.11万
-
财政年份:2010
-
负责人:Quitoriano, Nathaniel
-
依托单位:
国内基金
海外基金
登录
查看更多内容
LED芯片老化过程中有源区的缺陷演化机理研究
-
批准号:61504112
-
项目类别:青年科学基金项目
-
资助金额:22.0万元
-
批准年份:2015
-
负责人:林岳
-
依托单位:
p型GaN单晶衬底的HVPE制备及生长物理研究
-
批准号:61574164
-
项目类别:面上项目
-
资助金额:66.0万元
-
批准年份:2015
-
负责人:王建峰
-
依托单位:
III-族氮化物LEDs的复杂界面对注入载流子发光效率影响的研究
-
批准号:11174241
-
项目类别:面上项目
-
资助金额:51.0万元
-
批准年份:2011
-
负责人:孙元平
-
依托单位:
大功率InGaN基LED新型外延结构研究
-
批准号:61076119
-
项目类别:面上项目
-
资助金额:50.0万元
-
批准年份:2010
-
负责人:刘建平
-
依托单位:
收缩估计作为模型选择方法的有效性研究
-
批准号:10771006
-
项目类别:面上项目
-
资助金额:21.0万元
-
批准年份:2007
-
负责人:王汉生
-
依托单位: