III-nitride selective epitaxial nanostructures: From full-color light sources to solid-state single photon sources

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Scientific breakthroughs and technological progress in semiconductor physics, and processing had a transformative impact in virtually every aspect of our lives over the last few decades. Group III-nitrides (GaN and its alloys) is currently at the frontier of this field and offer unique opportunities for many existing and emerging applications, ranging from solid state lighting, full-color projection display, augmented/virtual reality to quantum applications. Epitaxial III-nitride nanowire-based devices including LEDs, lasers, micro-LEDs, and single photon sources have attracted tremendous interest in the recent years for a broad range of important applications. However, several key technological challenges need to be solved before the full potential of group III-nitrides for such applications can be realized. This research program aims at addressing these challenges and develop III-nitride devices which will surpass the existing alternatives both in cost and efficiency. It will be done by developing defects-free InGaN and AlGaN quantum dot-in-nanowire devices with high quantum efficiency in the deep visible (green, amber and red) and ultraviolet wavelengths. Drawing on my expertise and experience through innovations in design, epitaxial growth, device fabrications and characterizations of III-nitride devices, the research program focuses on two specific areas of great practical significance: full-color light sources, and single photon sources for quantum applications. High power, self-emissive nanoscale light emitters operating in the challenging and/or inefficient green/yellow and red spectral region are required for full-color LED lighting, display, and augmented/virtual reality applications. I propose to develop next generation full-color red, green and blue (RGB) LEDs monolithically integrated on a single chip through innovations in nearly defects-free InGaN/GaN nanowire heterostructures. Over the next 5 years, I will investigate InGaN photonic crystal nanowire array surface-emitting light emitters. To date, there have been no reliable single photon sources which can operate at >room temperature and over a wide spectral range. III-nitrides exhibit tunable energy band gaps and large exciton binding energy which are critical for quantum applications in hot environments such as data center and on-chip communications. I will develop site-selective quantum dot embedded in single nanowire over a wide spectral range (ultraviolet to deep visible) and at above room temperature. The proposed research program will help establish Canada as a leader in this emerging branch of nanophotonics and quantum research. The program will provide an alternative path for achieving ultrahigh efficiency lighting and single photon emission using unique selective area epitaxial growth and fabrication techniques. It will also provide an ideal platform for HQP training who will gain hands-on experience in design, growth, nanofabrication and characterizations.