红外探测事关国家战略安全. III-V族稀铋半导体作为一种新型直接带隙材料,在红外探测物理与器件应用方面有诱人前景.目前对稀铋材料物理研究主要集中在外延膜体材料,对低维结构的研究则刚起步.关于低维结构界面缺陷态,导带/价带带阶,稀铋对电子/空穴有效质量的影响等关键基础物理问题尚未得到解决,关于稀铋低维结构半导体材料的红外调制光谱研究也未见报道..本项目创新点在于,将国家基金仪器专项实验系统及时投入实用,发挥红外调制光谱独特优势,开展针对稀铋GaSb(Bi)和InGaAs(Bi)量子阱红外调制光谱研究.分析红外光致发光和光调制反射光谱特征及其温度/激发/磁场演化行为,结合理论模拟与形貌表征,形成关于界面特性与能带结构稀铋相关性机理认识,获取带阶分布与有效质量等参数,为稀铋量子阱材料与器件应用提供机理和参数准备.在红外调制光谱实验系统应用于材料物理研究中取得新结果,助推国家重点实验室学科发展.

Infrared detection is a key issue in the national strategic security. III-V dilute-bismuth semiconductor as a type of direct-gap material is very promising in physics and infrared detection applications. Recent studies of dilute-bismuth semiconductor physics are mainly focused on bulk-like epilayers rather than low-dimensional structures. As a result, key issues are unresolved of interfacial defects/electronic states, band offsets, and the effects of dilute bismuth on the electron/hole effective masses. Infrared modulated optical spectroscopy of dilute-bismuth low-dimensional semiconductors is not seen yet..The distinct innovative aspect of the project is to put the NSFC instrument special fund-supported infrared modulated PL experimental system into use for the study of dilute-bismuth GaSb(Bi) and InGaAs(Bi) quantum wells. Infrared PL and PR spectra and their evolution with temperature/excitation/magnetic field will be analyzed, interfacial effects and electronic band structure will be clarified with aid of theoretical simulation and XRD/STM characterization, and band offset and effective masses will be deduced, for the mechanism and parameter supports of the optoelectronic materials and devices application. New results will be established on the application of the experimental method/system to the study of material physics, the infrared modulation spectroscopic study as a distinguishing feature will be enhanced, so as to contribute to the progress of the fundamental research in the state key laboratory.