红外探测事关国家战略安全。基于窄禁带半导体HgCdTe的红外焦平面阵列(FPA)探测器在军事和国家安全等领域占据举足轻重地位。HgCdTe材料均匀性是FPA像元数扩大和探测器性能提升的瓶颈性难题，均匀性评价是国际上亟待解决却失于有效实验手段的关键问题。就国内而言，解决均匀性问题更有助于缩小与国际先进红外FPA探测器水平差距，推动材料与器件性能的进一步提升。.本项目创新点在于，基于我们红外调制光谱方法和实验系统优势，构建可覆盖4-20微米波段、百个单元以上扫描成像红外PL光谱测试能力和组份、掺杂/激活均匀性分析方法，为窄禁带半导体面阵材料工程应用和机理研究提供有效途径；开展HgCdTe面阵材料变条件组合研究，获取组分、电子能带结构、杂质均匀性关键参数及其随组分、掺杂水平、退火温度演化，观测新奇现象，弄清相关物理机制，在红外调制光谱物理研究中取得新结果，助推国家重点实验室学科发展。

Infrared detection is a key issue in the National strategic security, of which infrared Focal Plane Array (FPA) detector based on narrow-gap HgCdTe semiconductor plays a dominant role. The uniformity of the HgCdTe restricts the advances in the FPA performance, the characterization of the uniformity is hence a crucial and to-be well-resolved problem. Domestically, resolving the uniformity problem will be surely beneficial for promoting the performance of both materials and devices, and narrowing the gap with the advanced infrared FPA level in the world. .In this project, based on our innovative infrared modulation photoluminescence (PL) method and experimental system, a novel scanning infrared PL method will be first constructed for quantitatively characterizing the uniformity of alloy content and dopant/activation in a wide infrared spectral range of 4-20 microns and with an over 100 pixels scanning ability, so as to establish a routine procedure for narrow-gap semiconductor plane-array material engineering and experimental study. A detailed infrared modulated PL study of the HgCdTe plane-array materials will then be conducted under different conditions of temperature and excitation power for the uniformity and its evolution mechanism with content, doping and annealing temperature. New phenomena is to be identified, mechanisms clarified, and key parameters derived, which will be constructive for the research in the state key laboratory.