项目针对复相多铁薄膜,考虑铁相间高效磁电耦合通常仅在经特殊的复杂结构设计后能通过两相间产生各向异性应力传递的体系中产生，而不易在传统方法制备的复合体系中获得等难题,提出了在复相薄膜中通过引入渗流效应，利用简单的传统原位沉积工艺制备高耦合特性多铁复合薄膜的新观点。项目以这种新型复合薄膜为目标,基于复相中渗流效应产生以及渗流阈值的方位各向异性控制特点, 利用如磁控溅射等传统薄膜生长技术, 经先控制形成非晶再成核/析晶的两步法过程并利用基板诱导铁磁相取向生长，实现在原位随机生长的两相复合薄膜中形成取向铁磁相纳米串，且原位形成的纳米串沿薄膜法向排列并镶嵌于铁电相基体中，最终形成在两相间具有各向异性应力传递特点的类1-3结构复合多铁薄膜, 以解决目前无法在传统两相复合多铁体系中产生高磁电耦合的难题。初步结果已经获得了与目前报道的最佳性能相当的高磁电耦合性能，研究对复相多铁薄膜的发展和应用具重要意义。

In general, for high efficient magnetoelectric coupling in the ferromagnetic/ferroelectric composite thin film, the special microstructure, such as 1-3 structure which has 1-dimentianal parallel ferromagnetic phase wires assigned in ferroelectric matrix phase along the normal direction of the thin film, must be designed for generating anisotropy distortion of the ferromagnetic phase while stressed by the homogeneous dispersed ferroelectric matrix. The issue of difficult realization of magnetoelectric coupling in traditional composite systems, limit the practical and high quality application of multi-ferroic composite thin films. This project proposed to solve the problems by systematically studying the fundamental issues of multiferroic and the magnetoelectric coupling. In order to achieve highly efficient magnetoelectric coupling in the composite thin film prepared by conventional deposition methods, the anisotropy percolation threshold in different orientations of thin film is introduced to form strings of stacked ferromagnetic nano crystalline phase particles and the single-crystal substrate is adopted to control the growth of magnetic phase in special orientation in the composite thin film. The 1-3 like topological structure can be well controlled to realize with conventional technologies, such as RF sputtering which are widely used for preparation of traditional composite thin film, in which the two step processes of forming amorphous phase initially and then crystalline phase based on nucleation/crystallization mechanism. In this case, the problem that magnetoelectric coupling is hard to realize in the traditionally prepared composite thin film can be solved successfully by generating the anisotropy distortion of the ferromagnetic phase while stressed by the homogeneous dispersed ferroelectric matrix. Hence, high magnetoelectric coupling will be obtained in the multiferroic composite thin film prepared by conventional method. It is obvious that this project will promote the development of the multiferroic composite thin films and be beneficial to new applications of multifunctional electronic devices. Beside, very promising preliminary result which is almost the same as the best one reported by using the special designed 1-3 structure has been obtained to prove the idea concerned.