新型InAlN/GaN异质结功率器件新结构与模型

新型氮化镓（GaN）异质结材料及其器件技术是GaN半导体研究领域的热点和前沿课题之一。本申请针对新型GaN异质结-InAlN/GaN高压器件技术的关键问题进行理论与实验的创新研究：1)提出一种复合调制遂穿（CMT）高压InAlN/GaN HEMT新结构，运用半导体能带理论研究器件结构、外加电场对异质结能带的影响，揭示GaN器件一种新的工作机理；2)建立GaN异质结器件基于源极电子注入(SEI)的器件击穿物理模型，为研究GaN功率器件提供新的理论基础。在SEI模型指导下探索InAlN/GaN器件耐压与击穿的物理本质，阐明新结构的优越性。通过器件仿真与实验验证获得耐压>600 V、漏极电流>300 mA/mm的新型高压InAlN/GaN HEMT器件。本申请是一项器件理论与实验相结合的应用基础研究，对GaN电子器件的发展具有重要意义。

The novel GaN-based heterostructure material and device is one of the cutting-edge research topics of GaN semiconductor technology.In this application the key issues of high voltage InAlN/GaN device which bases on the novel GaN heterostructure platform will be studied by means of theory and experiments including: 1)To propose the Composite-Modulated-Tunneling (CMT) high voltage InAlN/GaN HEMT, by using band theory of semiconductor to study the impact of device structure and applied electric-field on the energy band of the heterostructure to reveal a new operating principle of GaN device; 2)To propose a physical model for device breakdown based on the Source-Electron-Injection (SEI) in GaN heterostructure device, which provides a new theory foundation for GaN power device research. Under the guidance of the proposed SEI model to explore the physical nature responsible for the breakdown of InAlN/GaN device. The advantage of the proposed CMT InAlN/GaN HEMT can be theoretically explained by the SEI model. To obtain the novel CMT high voltage InAlN/GaN HEMT with breakdown voltage higher than 600 V and maximum drain current density larger than 300 mA/mm through device simulation and experimental validation. This application is a fundamental research including device theory and experiment, which is of great scientific and practical value for GaN device development.