A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed
A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed
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一种基于Ag/ZnMgO/ZnO结构的快速响应的自供电日盲紫外光电探测器
DOI：
10.1039/c6ra28736k
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发表时间：
2017-02
期刊：
影响因子：
3.9
通讯作者：
Shen De-Zhen
中科院分区：
文献类型：
--
作者：
Fan Ming-Ming;Liu Ke-Wei;Chen Xing;Zhang Zhen-Zhong;Li Bing-Hui;Shen De-Zhen
在Ag/ZnMgO/ZnO垂直结构上实现了自供电日盲紫外探测器。采用ZnO外延层作为ZnMgO生长的缓冲层和器件的底部电极。有趣的是，由于Ag/ZnMgO和ZnMgO/ZnO界面处的内建电场，该器件表现出明显的自供电特性。在0 V时，我们的器件在275 nm处的峰值响应率为16 mA W−1，与其他ZnMgO自供电日盲紫外光电探测器相当。此外，该器件在0 V时具有非常快的响应速度（上升时间为24 μs，下降时间为300 μs）。该研究为在异质衬底上开发高响应、快响应、低成本的ZnMgO自供电日盲紫外探测器提供了一种更简单可行的方法。
A self-powered solar-blind ultraviolet (UV) photodetector was realized on a Ag/ZnMgO/ZnO vertical structure. A ZnO epitaxial layer was employed to serve as both the buffer layer for the growth of ZnMgO and the bottom electrode of the device. Interestingly, the device exhibited an obvious self-powered property owing to the built-in electric fields at the Ag/ZnMgO and ZnMgO/ZnO interfaces. At 0 V, the peak responsivity at 275 nm of our device was 16 mA W−1, which is comparable to that of other ZnMgO self-powered solar-blind UV photodetectors. Moreover, the device also exhibited a very fast response speed (24 μs rise time and 300 μs decay time) at 0 V. This study could provide a much easier and more feasible way to develop ZnMgO self-powered solar-blind UV photodetectors on foreign substrates with high responsivity, fast response speed, and low cost.
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