Ionized Cluster Beam III-V Microelectronics Films

这项建议是为了回应欧洲经济合作所宣布的在日本的工程研究资助机会。第一年的研究将在日本京都大学进行，第二年将在迈阿密大学进行。利用电离簇束(ICB)沉积方法对用于砷化镓集成电路工艺的薄膜进行研究。ICB研究是由京都大学的研究人员发起的，基于在高真空环境中产生、电离和加速基片上的原子团簇。这项研究的目的是评估有关ICB的说法，获得该技术的第一手工作知识，在专门准备的Si衬底上制备ICB外延GaAs薄膜，并开发用于GaAs技术的单晶互连薄膜。其他目标是与日本研究人员建立长期合作，并在迈阿密大学建立ICB研究。

This proposal was submitted in response to the ECSE announcement of Grant Opportunities for Engineering Research in Japan. The first year of research is to be performed in Japan at Kyoto University and the second, at the University of Miami. Studies will be conducted on thin films for GaAs integrated circuit technology using the ionized Cluster Beam (ICB) deposition method. ICB research was initiated by researchers at Kyoto University and is based upon producing, ionizing, and accelerating atom clusters onto a substrate in a high vacuum environment. The objectives of the proposed research are to evaluate the claims about ICB, to obtain a first hand working knowledge of the technique, to develop ICB epitaxial GaAs films on specially prepared Si substrates and to develop single crystal interconnect films for GaAs technology. Additional objectives are to establish long term cooperation with Japanese researchers and establish ICB research at the University of Miami.