RUI: Interface States in Polycrystalline Zinc Oxide

本研究是对多晶氧化锌中界面态性质的实验研究。掺杂剂，如铋，praesoorphin和钡的界面状态的性质的作用将被研究。所使用的主要实验技术是深能级瞬态光谱，同时使用多数载流子脉冲填充和界面态的选择性光激发。沿着捕获截面寻找重要的新信息，如界面态密度。多晶半导体对于半导体工业，主要是对于大面积器件，越来越重要。多晶氧化锌中存在的晶界界面态对于称为压敏电阻的电子器件至关重要。

This research is an experimental investigation into the nature of the interface states in polycrystalline zinc oxide. The role of dopants such as bismuth, praesodymium and barium on the nature of the interface states will be studied. The primary experimental technique to be used is deep level transient spectroscopy using both majority carrier pulse filling and selective optical excitation of interface states. Important new information such as interface density of states is sought along with capture cross sections. Polycrystalline semiconductors are of increasing importance to the semiconductor industry, principally to large area devices. The grain boundary interface states present in polycrystalline zinc oxide are of critical importance to electronic devices known as varistors.