RUI: Transition Metal Implantations in IN 0.53GA0.47As

为了获得近本征的高阻层，将在与InP晶格匹配的n型InGaAs中进行过渡金属Fe、Cr和V的离子注入。掺杂剂的活化将采用加热法和快速热退火法。通过霍尔、二次离子质谱仪、透射电子显微镜、X射线衍射和卢瑟福背散射测量，可以确定注入层中的电阻率、载流子迁移率、杂质浓度分布、晶格完整性和缺陷密度，以及注入物种的固溶度极限。过渡金属引入的能级和残余植入损伤的位置将通过材料上的光致发光测量以及n-i-n和p-i-n二极管上的红外光电流、深能级瞬变光谱和随温度变化的电流测量来确定。将对材料进行差示霍尔测量，并对n-i-n二极管进行I-V测量，以确定多个过渡金属植入物在单片集成电路中用于器件隔离的适用性。利用这种高阻材料，我们将制作光电导型探测器和p-i-n二极管，并用直流、光学和微波技术对其进行表征。根据材料和器件的特性，将确定铁、铬和钒离子注入在提供具有诱人性能的高阻材料方面的有效性。过渡金属注入、快速热退火和卢瑟福背散射测量将在华盛顿特区的海军研究实验室进行。InGaAs材料将从密歇根大学安娜堡分校的PalLab Bhattacharya教授的实验室获得。

To obtain near-intrinsic, high-resistance layers, ion- implantation of transition metals Fe, Cr and V in n-type InGaAs, lattice matched to InP, will be performed. Both furnace and rapid thermal annealing techniques will be used for dopant activation. By performing Hall, secondary ion mass spectroscopy, transmission electron microscopy, X-ray diffraction and Rutherford back scattering measurements, the resistivity, carrier mobility, impurity concentration profile, crystal lattice perfection and defect density in the implanted layers; and solid solubility limits of the implant species will be determined. The position of the energy levels introduced by the transition metals and residual implant damage will be determined by photoluminescence measurements on the material and also by infrared photocurrent, deep-level transient spectroscopy, and temperature-dependent, current measurements on n-i-n and p-i-n diodes. Differential Hall measurements on the material and I-V measurements on the n-i-n diodes will be performed to establish the applicability of multiple transition metal implants for device isolation in monolithic integrated circuits. Using the high-resistivity material photoconductive detectors and p-i-n diodes will be fabricated and characterized by dc, optical, and microwave techniques. Based on material and device characteristics, the effectiveness of Fe-, Cr- and V- implants in providing high resistivity material with attractive properties will be determined. The transition metal implantations, rapid thermal annealing, and Rutherford back scattering measurements will be performed at Naval Research Laboratory, Washington, D.C. InGaAs material will be obtained from Professor Pallab Bhattacharya's laboratory in the University of Michigan, Ann Arbor.