High-energy Implantations in Inp and GaAs

Inp 和 GaAs 中的高能注入

• 批准号: 9022438
• 负责人: Mulpuri Rao
• 金额: $ 20万
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-03-15 至 1994-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9022438&HistoricalAwards=false
• 关键词: energy; Implantations; Inp; GaAs

Basic research on MeV energy Si, Be, and B implantations will be performed. MeV energy implantations will be performed at room temperature into semi-insulating or semi-conducting InP and GaAs substrates in the energy range 1 -20 MeV and dose range 5 x 1012 - 2 x 1015 cm -2. The effect of tilt from normal axis, and rotation angle from the major flat, on the shape of the MeV energy as-implanted SIMS atomic density depth profiles will be studied. SIMS measurements will be performed on the variable energy Si, Be, and Fe as-implanted samples to find the four statistical moments of the atomic density depth distributions namely, projected range (Rp), straggle ( Rp), skewness (y), and kurtosis (B). These four statistical moments will be used in profile reconstruction using the Pearson IV distribution. Experimental statistical moments found in our study will be useful to predict the MeV energy implant profiles required for device and modeling.

开展MeV能量Si、Be、B注入的基础研究。MeV能量注入将在室温下对半绝缘或半导电的InP和GaAs衬底进行，能量范围为1 -20 MeV，剂量范围为5 × 1012 -2 × 1015 cm -2。研究了从法向轴的倾斜和从主平面的旋转角度对注入MeV能量的SIMS原子密度深度剖面形状的影响。将对注入的变能Si、be和Fe样品进行SIMS测量，以找到原子密度深度分布的四个统计矩，即投影范围（Rp）、散射（Rp）、偏度(y)和峰度(B)。这四个统计矩将用于使用Pearson IV分布进行剖面重建。在我们的研究中发现的实验统计矩将有助于预测设备和建模所需的MeV能量植入曲线。