Efficient P-Type Doping and the Role of Defects in Limiting Acceptor Activation in III-Nitrides

高效 P 型掺杂以及缺陷在限制 III 族氮化物受主激活中的作用

• 批准号: 0618948
• 负责人: Mulpuri Rao
• 金额: $ 8万
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-09-01 至 2008-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0618948&HistoricalAwards=false
• 关键词: Efficient; Type; Doping; Role; Defects

The objective of this research is obtaining highly conductive p-type layers in gallim nitride (GaN). The approach for accomplishing this objective is identifying defects limiting the p-type conduction in GaN and then reducing the density of these defects by using a novel ultra high-speed microwave annealing technique. Intellectual Merit: The defects and the defect complexes responsible for acceptor levels and several unidentified self-compensating deep donor levels in p-type in-situ and ion-implantation doped GaN epilayers will be investigated by performing photoluminescence, cathodoluminescence, Hall and secondary-ion-mass-spectrometry measurements on undoped and acceptor doped GaN layers prepared under several controlling conditions. Acceptor doped materials that will be studied in this work include both in-situ doped epilayers and post-growth ion-implantation doped layers. The in-situ and ion-implantation doped nitride layers will be subjected to a new ultra-fast high-temperature (1400C) microwave annealing step to repair the implant damage and to quench the native defects, which may be affecting the acceptor activation in both in-situ and ion-implantation doped layers. During annealing, the GaN layer will be protected by a graphite or an AlN cap. The intentionally introduced acceptor dopants will be Mg and Be. Broader Impact: Successful results of this work may have profound effect on the development of high-power, microwave, high-temperature and optoelectronic devices, which are of interest for national security. This work will be done in collaboration with several federal laboratories. Undergraduate and high-school students will be involved in the project. Results of the proposed work will be included in a special topics graduate course.

本研究的目的是在氮化镓（GaN）中获得高导电性的p型层。实现这一目标的方法是识别限制GaN中p型导电的缺陷，然后通过使用新的超高速微波退火技术来降低这些缺陷的密度。智力优势：通过对在几种控制条件下制备的未掺杂和受主掺杂的GaN层进行光致发光、阴极发光、霍尔和二次离子质谱测量，研究了p型原位和离子注入掺杂GaN外延层中负责受主能级和几种未识别的自补偿深施主能级的缺陷和缺陷复合物。受体掺杂材料，将在这项工作中研究包括在原位掺杂外延层和生长后的离子注入掺杂层。原位和离子注入掺杂的氮化物层将经受新的超快高温（140 ℃）微波退火步骤以修复注入损伤并淬灭原生缺陷，这可能影响原位和离子注入掺杂层中的受体激活。在退火期间，GaN层将由石墨或AlN帽保护。有意引入的受主掺杂剂将是Mg和Be。更广泛的影响：这一工作的成功结果将对高功率、微波、高温和光电器件的发展产生深远的影响，这些器件关系到国家安全。这项工作将与几个联邦实验室合作完成。本科生和高中生将参与该项目。拟议工作的结果将列入一个专题研究生课程。