Ion Implantation into SiC and Ge x Si 1-x

9319885将在6 h（{SYMBOL 97 \f“Symbol”}）-SiC和3C（{SYMBOL 98 \f“Symbol”}）-SiC的体晶体和外延层中进行Al、B、N和P离子注入。对于每种离子，将进行可变能量和可变剂量注入。通过分析注入材料中的注入二次离子质谱（西姆斯）深度分布，将确定在不同的离子能量下的注入深度分布的前四个时刻。使用这些实验确定的力矩，将使用Pearson-IV分布重建植入物轮廓，并与实际西姆斯轮廓进行比较。退火后，将通过西姆斯测量检查植入物的重新分布，然后对材料进行彻底表征。为了获得器件间隔离所需的高电阻区，200 keV O+补偿注入的各种剂量，伴随着等时退火将尝试在n-和p- SiC的各种导电性。使用本工作中开发的最佳注入/退火条件，高温/高功率p-n结整流器、蓝光LED和JFET将被制成SiC。B和P离子注入也将在x值在0.1至0.4范围内的（100）Si上生长的GexSi 1-x合金层中进行。注入的材料将在卤素灯RTA站中退火，然后通过使用上述用于SiC的各种技术来表征。拟议的工作将与海军研究实验室、橡树岭国家实验室、国家标准与技术研究所和通用电气研究中心（Schnectady）的科学家合作进行。***

9319885 Rao Al, B, N, and P ion implantation will be performed in both bulk crystals and epitaxial layers of 6h({SYMBOL 97 \f "Symbol"})-SiC and 3C({SYMBOL 98 \f "Symbol"})-SiC. For each ion, variable energy and variable dose implants will be performed. By analyzing the implant secondary ion mass spectrometry (SIMS) depth profiles in the as-implanted material, the first four moments of the implant depth distribution will be determined at various ion energies. Using these experimentally determined moments, the implant profile will be reconstructed using Pearson-IV distribution and compared with the actual SIMS profiles. Following annealing the redistribution of the implant will be checked by SIMS measurements and then the material will be thoroughly characterized. To obtain high resistance regions required for interdevice isolation, 200 keV O+ compensation implants of various doses, accompanied by isochronal anneals will be tried in both n- and p- SiC of various conductivities. Using the optimum implantation/annealing conditions developed in this work, high-temperature/high-power p-n junction rectifiers, blue LEDs, and JFETs will be made SiC. B and P ion implantations will also be performed into GexSi1-x alloy layers grown on (100) Si for x values in the range 0.1 to 0.4. The implanted material will be annealed in a halogen lamp RTA station and then characterized by using various techniques as mentioned above for SiC. The proposed work will be performed in collaboration with the scientist at Naval Research Laboratory, Oak Ridge National Laboratory, National Institute of Standards and Technology and General Electric Research Center (Schnectady). ***