Ion Implantation into SiC and Ge x Si 1-x

9319885 Rao将在6h({SYMBOL 97 \f " SYMBOL "})-SiC和3C({SYMBOL 98 \f " SYMBOL "})-SiC的体晶和外延层中进行Al、B、N和P离子注入。对于每个离子，将进行可变能量和可变剂量的植入。通过分析植入材料的二次离子质谱（SIMS）深度分布，确定了不同离子能量下植入深度分布的前四阶矩。利用这些实验确定的力矩，将使用Pearson-IV分布重建植入物的轮廓，并与实际的SIMS轮廓进行比较。退火后，植入物的再分布将通过SIMS测量检查，然后材料将被彻底表征。为了获得器件间隔离所需的高电阻区域，将在不同电导率的n-和p- SiC中尝试200kev不同剂量的O+补偿植入物，并伴有等时退火。利用在本工作中开发的最佳植入/退火条件，高温/大功率p-n结整流器，蓝色led和jfet将被制成SiC。在（100）Si上生长的GexSi1-x合金层中也将进行B和P离子注入，x值在0.1到0.4之间。植入材料将在卤素灯RTA站中退火，然后使用上述各种技术对SiC进行表征。拟议的工作将与海军研究实验室、橡树岭国家实验室、国家标准与技术研究所和通用电气研究中心（Schnectady）的科学家合作进行。* * *

9319885 Rao Al, B, N, and P ion implantation will be performed in both bulk crystals and epitaxial layers of 6h({SYMBOL 97 \f "Symbol"})-SiC and 3C({SYMBOL 98 \f "Symbol"})-SiC. For each ion, variable energy and variable dose implants will be performed. By analyzing the implant secondary ion mass spectrometry (SIMS) depth profiles in the as-implanted material, the first four moments of the implant depth distribution will be determined at various ion energies. Using these experimentally determined moments, the implant profile will be reconstructed using Pearson-IV distribution and compared with the actual SIMS profiles. Following annealing the redistribution of the implant will be checked by SIMS measurements and then the material will be thoroughly characterized. To obtain high resistance regions required for interdevice isolation, 200 keV O+ compensation implants of various doses, accompanied by isochronal anneals will be tried in both n- and p- SiC of various conductivities. Using the optimum implantation/annealing conditions developed in this work, high-temperature/high-power p-n junction rectifiers, blue LEDs, and JFETs will be made SiC. B and P ion implantations will also be performed into GexSi1-x alloy layers grown on (100) Si for x values in the range 0.1 to 0.4. The implanted material will be annealed in a halogen lamp RTA station and then characterized by using various techniques as mentioned above for SiC. The proposed work will be performed in collaboration with the scientist at Naval Research Laboratory, Oak Ridge National Laboratory, National Institute of Standards and Technology and General Electric Research Center (Schnectady). ***