Ion Implantation into SiC and Ge x Si 1-x

9319885 RaO Al、B、N和P离子注入将在6H({符号97\f“符号”)-碳化硅和3C({符号98\f“符号”)-碳化硅的大块晶体和外延层中进行。对于每个离子，将进行可变能量和可变剂量的注入。通过分析注入材料中的二次离子质谱仪(SIMS)深度分布，可以确定不同离子能量下注入深度分布的前四个时刻。使用这些实验确定的矩，将使用皮尔逊-IV分布重建种植体轮廓，并与实际的SIMS轮廓进行比较。在退火后，将通过SIMS测量来检查植入物的重新分布，然后对材料进行彻底的表征。为了获得器件间隔离所需的高阻区，将在不同电导率的n-和p-SIC中尝试不同剂量的200keV O+补偿注入，并同时进行等时退火热处理。利用本工作开发的最佳注入/退火条件，可以制作高温/大功率p-n结整流器件、蓝光LED和JFET。对于x值在0.1到0.4范围内的(100)Si上生长的GexSi1-x合金层，也将进行B和P离子注入。注入的材料将在卤素灯RTA站中进行退火热处理，然后使用上述针对碳化硅的各种技术进行表征。拟议的工作将与海军研究实验室、橡树岭国家实验室、国家标准与技术研究所和通用电气研究中心的科学家合作进行。***

9319885 Rao Al, B, N, and P ion implantation will be performed in both bulk crystals and epitaxial layers of 6h({SYMBOL 97 \f "Symbol"})-SiC and 3C({SYMBOL 98 \f "Symbol"})-SiC. For each ion, variable energy and variable dose implants will be performed. By analyzing the implant secondary ion mass spectrometry (SIMS) depth profiles in the as-implanted material, the first four moments of the implant depth distribution will be determined at various ion energies. Using these experimentally determined moments, the implant profile will be reconstructed using Pearson-IV distribution and compared with the actual SIMS profiles. Following annealing the redistribution of the implant will be checked by SIMS measurements and then the material will be thoroughly characterized. To obtain high resistance regions required for interdevice isolation, 200 keV O+ compensation implants of various doses, accompanied by isochronal anneals will be tried in both n- and p- SiC of various conductivities. Using the optimum implantation/annealing conditions developed in this work, high-temperature/high-power p-n junction rectifiers, blue LEDs, and JFETs will be made SiC. B and P ion implantations will also be performed into GexSi1-x alloy layers grown on (100) Si for x values in the range 0.1 to 0.4. The implanted material will be annealed in a halogen lamp RTA station and then characterized by using various techniques as mentioned above for SiC. The proposed work will be performed in collaboration with the scientist at Naval Research Laboratory, Oak Ridge National Laboratory, National Institute of Standards and Technology and General Electric Research Center (Schnectady). ***