Ion Implantation into SiC and Ge x Si 1-x

离子注入 SiC 和 Ge x Si 1-x

• 批准号: 9319885
• 负责人: Mulpuri Rao
• 金额: --
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1998-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9319885&HistoricalAwards=false
• 关键词: Ion; Implantation; into; SiC; Ge

9319885 Rao Al, B, N, and P ion implantation will be performed in both bulk crystals and epitaxial layers of 6h({SYMBOL 97 \f "Symbol"})-SiC and 3C({SYMBOL 98 \f "Symbol"})-SiC. For each ion, variable energy and variable dose implants will be performed. By analyzing the implant secondary ion mass spectrometry (SIMS) depth profiles in the as-implanted material, the first four moments of the implant depth distribution will be determined at various ion energies. Using these experimentally determined moments, the implant profile will be reconstructed using Pearson-IV distribution and compared with the actual SIMS profiles. Following annealing the redistribution of the implant will be checked by SIMS measurements and then the material will be thoroughly characterized. To obtain high resistance regions required for interdevice isolation, 200 keV O+ compensation implants of various doses, accompanied by isochronal anneals will be tried in both n- and p- SiC of various conductivities. Using the optimum implantation/annealing conditions developed in this work, high-temperature/high-power p-n junction rectifiers, blue LEDs, and JFETs will be made SiC. B and P ion implantations will also be performed into GexSi1-x alloy layers grown on (100) Si for x values in the range 0.1 to 0.4. The implanted material will be annealed in a halogen lamp RTA station and then characterized by using various techniques as mentioned above for SiC. The proposed work will be performed in collaboration with the scientist at Naval Research Laboratory, Oak Ridge National Laboratory, National Institute of Standards and Technology and General Electric Research Center (Schnectady). ***

9319885 Rao Al、B​​、N 和 P 离子注入将在 6h({SYMBOL 97 \f "Symbol"})-SiC 和 3C({SYMBOL 98 \f "Symbol"})-SiC 的体晶体和外延层中进行。对于每个离子，将执行可变能量和可变剂量注入。通过分析注入材料中的注入二次离子质谱（SIMS）深度分布，将确定不同离子能量下注入深度分布的前四个时刻。使用这些实验确定的力矩，将使用 Pearson-IV 分布重建种植体轮廓，并将其与实际 SIMS 轮廓进行比较。退火后，将通过 SIMS 测量检查植入物的重新分布，然后对材料进行彻底表征。为了获得器件间隔离所需的高电阻区域，将在各种导电率的 n- 和 p- SiC 中尝试各种剂量的 200 keV O+ 补偿注入，并伴随等时退火。利用这项工作中开发的最佳注入/退火条件，高温/高功率 p-n 结整流器、蓝色 LED 和 JFET 将由 SiC 制成。 B 和 P 离子注入也将被执行到在 (100) Si 上生长的 GexSi1-x 合金层中，x 值在 0.1 至 0.4 范围内。注入的材料将在卤素灯 RTA 站中退火，然后使用上述 SiC 的各种技术进行表征。拟议的工作将与海军研究实验室、橡树岭国家实验室、国家标准与技术研究所和通用电气研究中心（Schnectady）的科学家合作进行。 ***