Funding for Student Participation at the 20th International Conference on Ion Implantation Technology, June/July in Portland, Oregon

该项目的目标是提高学生在两年一度的第20届离子注入技术国际会议（IIT）的参与度，该会议将于2014年6月/7月在波特兰，俄勒冈州举行。IIT是唯一一个讨论离子注入技术最新和未来发展的会议。本次会议受到业界人士和学术研究人员的广泛关注。然而，学生的参与往往是稀疏的，即使它提供了极好的机会，让学生扩大他们的知识，离子注入掺杂和晶圆加工技术。本次会议的与会者将与学生分享他们的知识，会议在技术课程之前举办了一个信息量很大的学校。该提案旨在通过为美国大学的学生提供差旅费和会议及会议学校注册费支持，提高学生在本次会议上的参与度。这项提案的资金将有助于提高未来劳动力的质量，这些劳动力在美国半导体行业的设备制造工厂从事研发工作，这对美国经济至关重要。 该项目为研究生提供了一个机会，以扩大他们的知识，有关国家的最先进的离子注入技术，这是至关重要的纳米尺寸的设备制造。离子注入是唯一可行的选择性区域掺杂技术可用于纳米硅和其他半导体器件。它也是唯一可用于在纳米级范围内改变材料特性的可重复技术。由于离子注入设备成本高，大学缺乏设备。目前的研究生，谁是未来的劳动力，没有受到教育，以面对离子注入技术所带来的挑战。两年一度的IIT是唯一一个满足这些未来需求的会议，行业内的半导体研究人员和设备制造商广泛参加。来自NSF的资金将用于支持会议和会议学校的学生注册费以及约8名学生参加的学生旅费。会议主题包括：新兴的研究设备和材料，结和接触形成，精密材料改性离子注入和/或热处理，离子注入和新的掺杂技术，快速热处理，平面/非平面CMOS器件。还将邀请知名专家进行讲座，讨论先进器件的晶体管缩放和新材料以及结工艺技术。

The objective of this project is to enhance student participation at the biennial 20th International Conference on Ion Implantation Technology (IIT), which will be held in June/July 2014 at Portland, Oregon. The IIT is the only conference dealing with the state-of-the-art and future developments in ion-implantation technology. This conference is widely attended by industry personnel and academic researchers. However, student participation is often sparse even though it offers excellent opportunities for the students to broaden their knowledge of ion implantation doping and wafer processing technologies. The participants at this conference will share their knowledge with the students and the conference holds a highly informative school preceding the technical program. This proposal aims at improving student participation at this conference by providing travel expense and conference and conference school registration fee support for students at US universities. Funding of this proposal will help to improve the quality of future workforce needed pursue careers in US semiconductor industry R&D in device manufacturing plants, which is vital for US economy. The project provides an opportunity for graduate students to expand their knowledge concerning state-of-the-art ion-implantation technologies which are critical for fabrication of nano-dimensional devices. Ion-implantation is the only viable selective area doping technique available for nanoscale silicon and other semiconductor devices. It is also the only reproducible technique available for altering the material properties in the nanoscale range. Due to the high cost of ion-implantation equipment, there is a lack of availability of facilities at universities. Current graduate students, who are the future workforce, are not being educated to face the challenges offered by the ion-implantation technology. The biennial IIT is the only conference that addresses these future needs and is widely attended by semiconductor researchers in the industry and by equipment manufacturers. Funding from the NSF will be used to support student registration fee for the conference and conference school and student travel for participation of about 8 students. Conference topics include: Emerging Research Devices and Materials, Junction and Contact formation, Precision Materials Modification by ion implantation and/or thermal treatment, ion implantation and new doping techniques, Rapid Thermal Processing, and Planar/ non-planar CMOS devices. There will also be invited talks by well-known experts addressing Transistor Scaling and New Materials and Junction Process Technology for Advanced Devices.