Funding for Student Participation at the 20th International Conference on Ion Implantation Technology, June/July in Portland, Oregon

资助学生参加 6 月/7 月在俄勒冈州波特兰举行的第 20 届国际离子注入技术会议

• 批准号: 1419460
• 负责人: Mulpuri Rao
• 金额: $ 1.04万
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-06-01 至 2014-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1419460&HistoricalAwards=false
• 关键词: Funding; Student; Participation; 20th; International

The objective of this project is to enhance student participation at the biennial 20th International Conference on Ion Implantation Technology (IIT), which will be held in June/July 2014 at Portland, Oregon. The IIT is the only conference dealing with the state-of-the-art and future developments in ion-implantation technology. This conference is widely attended by industry personnel and academic researchers. However, student participation is often sparse even though it offers excellent opportunities for the students to broaden their knowledge of ion implantation doping and wafer processing technologies. The participants at this conference will share their knowledge with the students and the conference holds a highly informative school preceding the technical program. This proposal aims at improving student participation at this conference by providing travel expense and conference and conference school registration fee support for students at US universities. Funding of this proposal will help to improve the quality of future workforce needed pursue careers in US semiconductor industry R&D in device manufacturing plants, which is vital for US economy. The project provides an opportunity for graduate students to expand their knowledge concerning state-of-the-art ion-implantation technologies which are critical for fabrication of nano-dimensional devices. Ion-implantation is the only viable selective area doping technique available for nanoscale silicon and other semiconductor devices. It is also the only reproducible technique available for altering the material properties in the nanoscale range. Due to the high cost of ion-implantation equipment, there is a lack of availability of facilities at universities. Current graduate students, who are the future workforce, are not being educated to face the challenges offered by the ion-implantation technology. The biennial IIT is the only conference that addresses these future needs and is widely attended by semiconductor researchers in the industry and by equipment manufacturers. Funding from the NSF will be used to support student registration fee for the conference and conference school and student travel for participation of about 8 students. Conference topics include: Emerging Research Devices and Materials, Junction and Contact formation, Precision Materials Modification by ion implantation and/or thermal treatment, ion implantation and new doping techniques, Rapid Thermal Processing, and Planar/ non-planar CMOS devices. There will also be invited talks by well-known experts addressing Transistor Scaling and New Materials and Junction Process Technology for Advanced Devices.

该项目的目标是提高学生对两年一度的第 20 届国际离子注入技术会议 (IIT) 的参与度，该会议将于 2014 年 6 月/7 月在俄勒冈州波特兰举行。 IIT 是唯一讨论离子注入技术的最新技术和未来发展的会议。本次会议得到了业界人士和学术研究人员的广泛参与。然而，尽管它为学生提供了拓宽离子注入掺杂和晶圆加工技术知识的绝佳机会，但学生的参与往往很少。本次会议的参与者将与学生分享他们的知识，会议在技术课程之前举办了一次内容丰富​​的学校活动。该提案旨在通过为美国大学学生提供差旅费以及会议和会议学校注册费支持，提高学生对本次会议的参与度。该提案的资助将有助于提高未来在设备制造工厂从事美国半导体行业研发工作所需的劳动力质量，这对美国经济至关重要。 该项目为研究生提供了扩展有关最先进离子注入技术知识的机会，这些技术对于纳米尺寸器件的制造至关重要。离子注入是可用于纳米级硅和其他半导体器件的唯一可行的选择性区域掺杂技术。它也是唯一可用于在纳米级范围内改变材料特性的可重复技术。由于离子注入设备成本高昂，大学缺乏可用的设施。目前的研究生是未来的劳动力，他们没有接受过应对离子注入技术带来的挑战的教育。两年一度的 IIT 是唯一满足这些未来需求的会议，业界半导体研究人员和设备制造商广泛参加。 NSF 的资金将用于支持会议和会议学校的学生注册费以及约 8 名学生参加的学生旅行。会议主题包括：新兴研究器件和材料、结和接触形成、通过离子注入和/或热处理进行的精密材料改性、离子注入和新掺杂技术、快速热处理以及平面/非平面 CMOS 器件。知名专家还将受邀发表演讲，讨论先进器件的晶体管微缩、新材料和结工艺技术。