Efficient P-Type Ion-Implantation Doping of III-Nitrides for Optomizing Device Performance

III 族氮化物的高效 P 型离子注入掺杂可优化器件性能

• 批准号: 0725570
• 负责人: Mulpuri Rao
• 金额: --
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-01 至 2010-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725570&HistoricalAwards=false
• 关键词: Efficient; Type; Ion; Implantation; Doping

The objective of this research is obtaining planar, selective area doped, highly conductive p-type gallium nitride (GaN) and aluminum gallium nitride (AlGaN) layers for developing efficient optical, high-power, and high-frequency devices. The proposed approach involves subjecting magnesium (Mg) and beryllium (Be) ion-implantation doped GaN and AlGaN epitaxial layers, protected by pulse laser deposited aluminum nitride or magnesium oxide capping layers, to ultra-fast high-temperature microwave annealing treatment. Intellectual Merit: This work has two main components: (1) solving the implanted acceptor (Mg and Be) activation problem in GaN and AlGaN using ultra-fast, high-temperature (=1300 C) microwave annealing, and (2) finding the defects responsible for poor acceptor dopant activation in GaN and AlGaN. A theoretical study of the role of defects in acceptor impurity activation behavior also will be performed based on first-principles calculations. Experimental results on as-grown and implanted acceptor doped layers and p-n junction diodes will be correlated with theoretical results to gain a better understanding of the various factors that limit implanted acceptor activation in GaN and AlGaN.Broader Impact: Successful results of this work may lead to a drastic improvement in the performance of nitride based devices, whose market share is growing with time. The proposed work is a collaborative research involving George Mason University, Naval Research Laboratory, and National Institute of Standards and Technology. A female Ph.D. student, a high school science teacher, and undergraduate and high school students will be involved on the project. Results of this work will be included in a special topics graduate course.

本研究的目的是获得平面的，选择性区域掺杂的，高导电p型氮化镓（GaN）和氮化铝镓（AlGaN）层，用于开发高效的光学，高功率和高频器件。所提出的方法涉及使镁（Mg）和铍（Be）离子注入掺杂的GaN和AlGaN外延层经受超快高温微波退火处理，所述GaN和AlGaN外延层由脉冲激光沉积的氮化铝或氧化镁覆盖层保护。 智力优势：这项工作有两个主要组成部分：（1）使用超快，高温（=1300 C）微波退火解决GaN和AlGaN中注入的受主（Mg和Be）激活问题，以及（2）找到导致GaN和AlGaN中受主掺杂剂激活不良的缺陷。基于第一性原理计算，我们还将对缺陷在受主杂质激活行为中的作用进行理论研究。实验结果的生长和注入受主掺杂层和p-n结二极管将与理论结果，以获得更好地了解各种因素，限制注入受主激活GaN和AlGaN。更广泛的影响：这项工作的成功结果可能会导致氮化物为基础的设备，其市场份额随着时间的推移而增长的性能大幅改善。拟议的工作是一项合作研究，涉及乔治梅森大学，海军研究实验室，和国家标准与技术研究所。女博士学生，高中科学教师，本科生和高中生将参与该项目。这项工作的结果将被列入一个专题研究生课程。