Engineering Research Equipment Grant: Suss MJB 3 UV 300 High Performance Aligner

我们所要求的设备将有助于我们对已加工的半导体材料进行评估。为了支持亚微米结构的微波等离子体刻蚀和氧化物和金刚石的微波等离子体薄膜沉积的研究，需要一种高性能的掩模对准器。准直器是使我们的微波蚀刻工作进入亚微米特征尺寸区域所必需的。

The equipment that we are requesting will aid us in evaluation of processed semiconductor material. A high performance mask-aligner is requested to support research in microwave plasma etching of sub- micron structures and microwave plasma thin-film deposition of oxides and diamond. The aligner is necessary to allow our microwave etching work to proceed into the sub-micron feature size regime.