Intraband Processes and New Device Concepts in Compound Semiconductor Heterostructures

该项目涉及半导体器件中带内(而不是带间)工艺的研究，以及对新器件概念的相关研究。这项研究将包括电子和红外测量以及设备物理理论和建模。这项研究将着眼于更好地理解硅和选择性掺杂的AlGaAs/GaAs的带内过程，并朝着有助于以下方面的概念：(A)用于逻辑、红外数据传输和振荡器的超快器件；(B)新型红外探测器；(C)神经网络的电子实现的新手段。拟议的一些工作是探索性的，而其他方面代表了当前研究的继续。与我们的预测一致，涉及隧道和光激发的带内过程被发现在电子开关速度和定制红外探测器在特定波长下获得最佳响应的能力方面具有特殊的优势。这项研究将涉及皮秒开关和异质结器件的类似频域问题。这项工作将包括对Tsu-Esaki隧道效应标准处理的修正以及电子-电子相互作用和异质结构界面粗糙度的分析。红外探测器的概念涉及非本征硅器件和异质结构中的非线性效应，并将研究杂质带界面的效应。

The project involves research on intraband (as opposed to interband) processes in semiconductor devices and related research on new device concepts. The research will include electronic and infrared measurements as well as device physics theory and modeling. The research will be oriented toward improved understanding of intraband process in silicon and selectively doped A1GaAs/GaAs and toward concepts which could contribute to the development of (A) ultrafast devices for logic, infrared data transmission, and oscillator applications, (B) new types of infrared detectors and (C) new means of electronic implementation of neural networks. Some of the proposed work is exploratory while other aspects represent a continuation of current research. In accord with our predictions, intraband processes involving tunneling and photoexcitation have been found to have special advantages in terms of electronic switching speed and the ability to tailor infrared detectors for optimal response at particular wavelengths. The research will deal with issues related to picosecond switching and the analogous frequency domain for heterostructure devices. The work will include analysis of corrections to the standard treatment of Tsu-Esaki tunneling as well as electron-electron interactions and heterostructure interface roughness. Infrared detector concepts involving nonlinear effects in extrinsic silicon devices and heterostructures will be developed and effects at impurity band interfaces will be studied.