Point Defects in Semiconductors using Optical Detection of Magnetic Resonance

该计划是利用光学磁共振检测(ODMR)和光学电子-核双共振检测(ODENDOR)对元素和化合物半导体中的科学和技术要点缺陷进行的实验研究。关于半导体中这种缺陷的理论，即“深能级”问题，最近取得了令人振奋的新进展。该计划中概述的研究旨在确定缺陷的识别和微观晶格配置，并绘制出它们在基态和激发态的电子和振动结构--这些信息对指导和对抗理论至关重要。ODMR和ODENDOR在这类研究中的力量和潜力已经在目前的赠款下进行的实验中得到了极大的证明。在所提出的更新计划中，新的ODMR和Endor实验被用来研究本征晶格缺陷(空位、间隙、Frenkel对、反位等)。以及一些更重要的化学杂质和由它们相互作用产生的简单络合物。时间分辨光学磁共振仪将为我们的研究提供一个新的方向，用于研究这些材料中鲜为人知的发光和能量转移过程的动力学。

The program is an experimental study of scientifically and technologically important point defects in elemental and compound semiconductors using optical detection of magnetic resonance (ODMR) and optical detection of electron-nuclear double resonance (ODENDOR). The theory of such defects in semiconductors, the "deep level" problem, has made exciting new advances recently. The investigation outlined in this program is directed toward determining the identification and microscopic lattice configuration of the defects, and mapping out the electronic and vibronic structure in their ground and excited states -- information vital to guide and confront theory. The power and potential of ODMR and ODENDOR for such studies has been demonstrated dramatically by experiments conducted under the present grant. In the proposed renewal program, new ODMR and ENDOR experiments are outlined for the study of the intrinsic lattice defects (vacancies, interstitials, Frenkel pairs, antisites, etc.) as well as some of the more important chemical impurities and simple complexes resulting from their interactions. A new direction to our studies will be afforded by the instrumentation of time-resolved ODMR for the study of the poorly understood dynamics of luminescence and energy transfer processes in these materials.