Point Defects in Semiconductors Using Optical Detection of Magnetic Resonance

本项目是一项科学的实验研究， 元素和化合物中技术上重要的点缺陷 使用磁共振的光学检测的半导体， 电子-核双共振的光学探测。 一些 缺陷是由锌碲的电子辐照产生的 低温下的样品。 工作的另一部分涉及 II-VI族和III-V族中的亚稳缺陷，如DX和EL 2中心 半导体 其他正在研究的材料是富勒烯， 氮掺杂的锌硒和多孔硅。

This project is an experimental study of scientifically and technologically important point defects in elemental and compound semiconductors using optical detection of magnetic resonance and optical detection of electron-nuclear double resonance. Some of the defects are produced by electron irradiation of Zinc-Tellurium samples at low temperatures. Another part of the work deals with metastable defects, such as DX and EL2 centers, in II-VI and III-V semiconductors. Other materials being studied are fullerenes, MBE nitrogen-doped Zinc-Selenium and porous silicon.