GaAs MESFET Characterization and Modeling for High- temperature Integrated Circuit Applications (25-250 C and above)

本研究关注环境温度和衬底温度升高（25℃至250℃或更高）对集成GaAs mesfet终端特性的影响。这项工作将集中在晶体管大小信号参数的详细实验和分析建模上，特别强调温度引起的阈值电压漂移，以及小信号输出电导gd=dID/dVgs随温度和频率的变化。恶劣环境下高速集成电路最有可能的受益者包括汽车、飞机、太空和地热勘探行业，所有这些行业预计在20世纪90年代及以后的电子应用将超过硅的能力。因此，这项工作预测了美国工业中一个庞大而重要的部门即将到来的需求。

This research concerns the effects of elevated ambient and substrate temperatures (25 C to 250 C or higher) on the terminal characteristics of integrated GaAs MESFETs. The work will focus on the detailed experimental and analytical modeling of large and small signal parameters of the transistors, with particular emphasis on temperature-induced shift of threshold voltage as a result of backgating, and variations of small-signal output conductance gd=dID/dVgs with temperature and frequency. The most likely beneficiaries of severe-environment high-speed integrated circuits include the automobile, the aircraft, the space and geothermal exploration industries, all of whose projected electronics applications for the 1990's and beyond will exceed the capabilities of silicon. This work thereby anticipates the forthcoming needs of a large and important sector of U.S. industry.