US-Sweden Cooperative Research: Numerical Modeling of Hot- Electron Effects as a Source of Excess Noise in Schottky- Barrier Diodes

该奖项将支持电子领域的合作研究 Ting-Wei Tang博士，马萨诸塞州大学 和埃里克科尔贝格教授，应用电子系 物理学，查尔默斯理工大学，哥德堡，瑞典。 本项目将重点研究砷化镓中的过量噪声 肖特基势垒二极管，专为毫米波和混频器设计。 关于存在过量噪声的可靠实验证据， 与热电子效应有关的毫米波二极管已经被 由查尔默斯研究小组收集。 这个小组有能力 在GaAs毫米波二极管和噪声的制造中， 从几百兆赫到大约一个 100 GHz。 然而，对二极管的理论理解 通常缺乏相对于偏置电流的噪声特性。 马萨诸塞州大学集团以其 半导体中热电子和其他效应的数值模拟， 喷射器装置。拟议的研究将旨在：l）详细的 理论模型（将利用数值 马萨诸塞州大学的建模专业知识）， 和2）实验验证（使用瑞典的专业知识， 制造高质量肖特基二极管）。 的结果 项目预计将导致改善设计的低噪音 应用于毫米波之萧特基障壁二极体。

This award will support collaborative research in electrical engineering between Dr. Ting-Wei Tang, University of Massachusetts and Professor Erik Kollberg, Department of Applied Electron Physics, Chalmers University of Technology, Goteburg, Sweden. The project will focus on the study of excess noise in GaAS Schottky-barrier diodes, designed for millimeter waves and mixers. Solid experimental evidence on the existence of excess noise in millimeter wave diodes related to hot electron effects has been collected by Chalmers research group. This group has competence in both the fabrication of GaAs millimeter wave diodes and noise measurements from frequencies of a few hundred MHz to about a hundred GHz. However, a theoretical understanding of the diode noise characteristics versus bias current is generally lacking. The University of Massachusetts group is well-known for its numerical modeling of hot-electron and other effects in semicon- ductor devices. The proposed research will aim at: l) a detailed theoretical model (to be developed utilizing the numerical modeling expertise available at the University of Massachusetts), and 2) an experimental verification (using Swedish expertise on fabricating high quality Schottky diodes). The results of this project are expected to lead to improved designs of low-noise Schottky-barrier diodes for millimeter wave application.