Crystal Growth by a Modified Czochralski Process

本研究的目的是提高散装产品的质量 晶体的温度场的研究和修改， 晶体生长前沿 一种改进的直拉法， 将加热器浸入晶体下方的熔体中 生长将进行实验研究，以获得平坦的生长前沿 这是预期提供具有降低的 缺陷 将在PI机构进行初步研究 与NaNO3，和信息学习转移到增长 其他材料，如GaAs和InP，与AT T合作 Laboratories.

The goal of this research is to improve the quality of bulk crystals by study and modification of the temperature field at the crystal growth front. A modified Czochralski process which will incorporate a heater immersed in the melt just below the crystal growth will be studied experimentally to obtain a flat growth-front profile which is expected to provide bulk crystals with reduced defects. Primary studies at the PI's facility will be carried out with NaNO3, and the information learned transferred to the growth of other materials such as GaAs and InP, in collaboration with AT&T Laboratories.