Quantum Transport in Semiconductor and Metal Microstructures

本研究关注砷化镓和金属微结构中的介观现象，主要涉及电导波动、隧道效应和相相干性。一维导线将使用电子束光刻技术制造，然后使用离子束辐照，在绝缘区域和金属区域之间产生相对清晰的边界。这些一维线将用于研究量子混沌散射，这是一个新的和活跃的物理学领域。还将制作-钽的一维导线，为研究普遍电导波动提供一个更清洁的系统。在第三个区域，惠斯通桥将由四个砷化镓臂组成，用于探测单光子。砷化镓中的DX中心将吸收单个光子，导致电导波动“台阶”。这是一种新颖的光学处理方法，可以导致散射中心结构的离散已知变化。

This research is concerned with mesoscopic phenomena in gallium arsenide and metal microstructures, primarily related to conductance fluctuations, tunneling, and phase coherence. One- dimensional wires will be fabricated using electron-beam lithograpy techniques followed by ion-beam irradiation that produces a relatively sharp boundary between insulating and metallic regions. These one-dimensional wires will be used to study quantum chaotic scattering, a new and active field of physics. One-dimensional wires of beta-tantalum will also be made to provide a cleaner system for the study of universal conductance fluctuations. In a third area a Wheatstone Bridge will be constructed of four gallium arsenide arms that will be utilized to detect single photons. A DX center in the gallium arsenide will absorb a single photon leading to a conductance fluctuation "step". This is a novel optical processing approach that leads to a discrete known change in the configuration of scattering centers.