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Novel Photoactive Process for Microlithographic Applications

Novel Photoactive Process for Microlithographic Applications
用于微光刻应用的新型光活性工艺
批准号:
9160982
负责人:
Donald Johnson
金额:
$4.96万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-01-15 至 1992-09-30

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中文摘要
翻译
这一建议涉及到初步进入发展 一种新颖的光刻工艺, 制作亚微米级的微平版印刷 图像. 该提案涉及一个进程, 浸渍非辐射敏感聚合物 抗蚀剂涂层具有非反应性的气态 光活性材料,成像所述组合物 使用各种曝光源, 未反应的光活性材料,留下潜在的 然后优选使用氧气显影图像 反应离子蚀刻 最大的好处是, 该方法不需要辐射敏感的抗蚀剂, 它也不使用多个涂层;它涉及到 相比之下, 涉及标准光致抗蚀剂处理。 它能够 在顶部提供亚微米图像尺寸 层成像过程。 过程的基调可以 是正的还是负的,取决于 处理步骤的顺序。这个过程很有用 用于紫外线、深紫外线、X射线成像 电子束和离子束辐射。 是 潜在地可用于形成抗蚀剂图像 在半导体和电光衬底上,如 以及印刷电路板、内层、光学 盘和平版制备。
英文摘要
This proposal relates to initial into the development of a novel new lithographic process which is capable of generating submicrometer microlithographic images. The proposal relates to a process of impregnating a non-radiation sensitive polymeric resist coating with a non-reactive, gaseous photoactive material, imaging said composition using a variety of exposure sources, removing the unreacted photoactive material, leaving of latent image is then developed, preferably using oxygen reactive ion etching. The major benefit is that this process does not require a radiation sensitive resist, nor does it use multiple coatings; and it involves little or virtually no additional processing compared to standard photoresist processing. It is capable of providing submicron image dimensions in a top layer imaging process. The tone of the process can be either positive or negative, depending on the sequence of processing steps. This process is useful for imaging with ultraviolet, deep-UV, X-ray, electron-beam, and ion-beam radiation. It is potentially useful for the formation of resist images on semiconductor and electro-optical substrates, as well as printed circuit board, innerlayer, optical disc, and litho plate preparation.
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