Semiconductor Heterostructures: Synthesis, Processing, Characterization and Non-linear Optical Properties

ZnSiGeP2异质外延薄膜将通过化学束外延（CBE）和等离子辅助CBE生长；将采用等离子体辅助加工和湿化学技术合成SiO2/Si结构和钝化Si参考表面，用于材料合成和加工现象的基础研究，以及非线性光学效应的研究。NLO研究将在Si、GaP和SiGe/Si衬底以及SiO2/Si表面上生长ZnGeP2块状单晶和ZnSiGeP2异质外延薄膜。这些研究有望提供有关NLO机制的基本信息，特别是它们对界面应变和界面键合化学的依赖。然后，这些信息将用作设备结构设计的基础，然后将对潜在应用进行评估。这项研究有望推动材料科学在合成和加工具有增强性能的新型非线性光学材料方面的发展。这些信息将构成评估其性能优势的基础，作为先进计算、信息处理和电信中使用的光电电路元件。

ZnSiGeP2 heteroepitaxial films will be grown by chemical beam epitaxy(CBE), and plasma-assisted CBE; SiO2/Si structures, and passivated Si reference surfaces will be synthesized by plasma-assisted processing and wet chemistry techniques for basic investigations of materials synthesis and processing phenomena, and for investigations of nonlinear optical(NLO) effects. The NLO studies will be conducted with ZnGeP2 bulk single crystals and ZnSiGeP2 heteroepitaxial films grown on Si, GaP and SiGe/Si substarates, and at SiO2/Si surfaces. These studies are expected to yield basic information relative to NLO mechanisms, and in particular their dependence on interfacial strain, and interfacial bonding chemistry. This information will then be used as a basis for the design of device structures, which will then be evaluated for potential applications. %%% This research is expected to advance the materials science in synthesis and processing of novel nonlinear optical materials with enhanced properties. This information will form the basis for evaluation of their performance advantages as optoelectronic circuit elements used in advanced computing, information processing, and telecommunications.