CAREER: Antimony-Based Nanowires and Nanowire Heterostructures: Synthesis and Characterization

职业：锑基纳米线和纳米线异质结构：合成和表征

• 批准号: 0847523
• 负责人: Chen Yang
• 金额: $ 42.25万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2014-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0847523&HistoricalAwards=false
• 关键词: CAREER; Antimony; Based; Nanowires; Nanowire

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).Technical: This CAREER project includes integrated research and education activities. Group III-V antimony based semiconductors exhibit the smallest band gaps and highest electron mobilities of any known semiconductors yet their device exploration is limited. This is mainly due to the difficulties in growing antimony-based materials with high quality and the lack of a lattice-matched, semi-insulating substrate. Nanowire growth has the potential to overcome these difficulties. The objective of this research project is to synthesize antimony-based nanowires and nanowire heterostructures with high quality and novel electronic and opto-electronic properties. The project consists of the following research activities: investigation of the growth methods to synthesize undoped and doped nanowires; development of successful strategies to grow coaxial and axial nanowire heterostructures; demonstration of different types of nanowire heterostructures; characterization of nanowires and nanowire heterostructures using electron microscopy, optical, electrical, and optoelectronic measurements; evaluation of their potentials for nano-electronics and nano-photonics applications through device fabrications and performance investigations. Success of the research is expected to contribute to the development of a universal approach to grow nanostructures based on group III-antimony material system in a controlled and sophisticated manner as well as detailed understanding on properties, especially electronic properties, of group III-antimony nanowires.Non-technical: The project addresses basic electronic/photonic materials research issues in a topical area of materials science with high technological relevance. The success of the research activities will enable development of devices that will impact important technical areas such as light emission and detection, telecommunications, computing, and sensors. The project includes an integrated education and outreach program that aims at addressing critical challenges in current nanoscience education for audience ranging from graduate students to K-12. This includes 1) the development of a new interdisciplinary course on "Physics and Chemistry of Nanometerials" at Purdue University, 2) the integration of undergraduate students into nano-related research programs by participation in the Summer Undergraduate Research Fellowship (SURF) program, 3) a National Center for Learning and Teaching of Nanoscience and Nanotechnology Workshop for 7-16 teachers, 4) the development of new demonstration modules for an existing nano-museum and the dissemination of results through various web-based tools as the nano-HUB, and 5) an effort on mentoring underrepresented student group through Women in Science.

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。技术：该职业生涯项目包括综合研究和教育活动。III-V族锑基半导体表现出任何已知半导体中最小的带隙和最高的电子迁移率，但它们的器件开发受到限制。这主要是由于难以生长高质量的锑基材料以及缺乏晶格匹配的半绝缘衬底。纳米线生长有可能克服这些困难。本研究计画的目标是合成具有高品质及新颖电子与光电性质的锑基奈米线与奈米异质结构。该项目包括以下研究活动：研究合成未掺杂和掺杂纳米线的生长方法;制定成功的生长同轴和轴向纳米线异质结构的战略;演示不同类型的纳米线异质结构;使用电子显微镜、光学、电学和光电测量表征纳米线和纳米线异质结构;通过器件制造和性能研究评估其在纳米电子学和纳米光子学应用中的潜力。该研究的成功有望有助于开发一种通用方法，以可控和复杂的方式生长基于III族锑材料体系的纳米结构，并详细了解III族锑纳米线的性能，特别是电子性能。非技术性：该项目涉及具有高技术相关性的材料科学主题领域的基本电子/光子材料研究问题。研究活动的成功将使设备的开发能够影响重要的技术领域，如光发射和检测，电信，计算和传感器。该项目包括一个综合教育和推广计划，旨在解决当前纳米科学教育的关键挑战，受众范围从研究生到K-12。这包括1）在普渡大学开发一门新的跨学科课程“纳米材料的物理和化学”，2）通过参加夏季本科生研究奖学金（SURF）计划，将本科生融入纳米相关的研究计划，3）为7-16名教师举办的纳米科学和纳米技术研讨会的学习和教学国家中心，4）为现有的纳米博物馆开发新的演示模块，并通过各种基于网络的工具（如纳米中心）传播成果，以及5）通过妇女参与科学指导代表性不足的学生群体。