课题基金 / 基金详情

Materials and Processes for Nanoelectronics

Materials and Processes for Nanoelectronics
纳米电子学材料和工艺
批准号:
9202294
负责人:
Ilesanmi Adesida
金额:
$45.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-08-15 至 1996-07-31

项目摘要

项目成果

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中文摘要
翻译
拟议研究的目标是 发展关键技术, 低维外延生长 通过分子束外延的纳米结构, 材料加工,使之成为可能, 功能材料的制备和表征 尺寸小于 现有设备。 预计这一 维度将导致观察到 新的量子和弹道效应, 从而导致具有更高 液上性能和操作 氮气温度。 我们的愿景是, 完成这项研究应导致1) 对创新增长和再增长的新见解 方法,2)对表征的新见解 超小异质层和界面3)更多 先进的纳米纤维技术,4) 了解新的物理效应, 纳米结构和器件,5)改进的 和创新的纳米器件。
英文摘要
The goals of the proposed research are to develop key technologies in the fields of epitaxial growth of low-dimensional nanostructures by molecular beam epitaxy and materials processing to make possible the fabrication and characterization of functional nanodevices with dimensions smaller than existing devices. It is expected that this dimensionality will lead to the observation of new quantum and ballistic effects which will in turn lead to novel devices with higher performance and operation above liquid nitrogen temperatures. It is our vision that the completion of this research should lead to 1) new insight into innovative growth and regrowth methods, 2) new insight into characterizing ultra-small heterolayers and interfaces 3) more advanced nanofabrication technologies, 4) an understanding of new physical effects in nanoscale structures and devices, 5) improved and innovative nanodevices.
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会议论文
MRI: Acquisition of Analytical Tools for Imaging and Spectroscopy of Nanoscale Structures and Systems
GOALI: SiGe/Si Modulation-Doped Field-Effect Transistors for Low Power, High Speed Circuit Applications
Processing and Devices for Integrated Optoelectronics in GaN and Related Compounds
The Quantum Modulated Transistor: Fabrication and Charac- terization
国内基金
海外基金
Submesoscale Processes Associated with Oceanic Eddies
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    160万元
  • 批准年份:
    2022
  • 负责人:
    董昌明
  • 依托单位: